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Title: Tracking Efficiency And Charge Sharing of 3D Silicon Sensors at Different Angles in a 1.4T Magnetic Field

Abstract

A 3D silicon sensor fabricated at Stanford with electrodes penetrating throughout the entire silicon wafer and with active edges was tested in a 1.4 T magnetic field with a 180 GeV/c pion beam at the CERN SPS in May 2009. The device under test was bump-bonded to the ATLAS pixel FE-I3 readout electronics chip. Three readout electrodes were used to cover the 400 {micro}m long pixel side, this resulting in a p-n inter-electrode distance of {approx} 71 {micro}m. Its behavior was confronted with a planar sensor of the type presently installed in the ATLAS inner tracker. Time over threshold, charge sharing and tracking efficiency data were collected at zero and 15{sup o} angles with and without magnetic field. The latest is the angular configuration expected for the modules of the Insertable B-Layer (IBL) currently under study for the LHC phase 1 upgrade expected in 2014.

Authors:
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Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1043231
Report Number(s):
SLAC-REPRINT-2012-079
TRN: US1203047
DOE Contract Number:  
AC02-76SF00515
Resource Type:
Conference
Journal Name:
Nucl.Instrum.Meth.A636:S42-S49,2011
Additional Journal Information:
Conference: Contributed to7th International 'Hiroshima' Symposium On The Development And Application Of Semiconductor Tracking Detectors (HSTD7 Hiroshima), Hiroshima, Japan, 8/29/2009-9/1/2009
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; CERN; CONFIGURATION; EFFICIENCY; ELECTRODES; HARDNESS; HIGH ENERGY PHYSICS; MAGNETIC FIELDS; PION BEAMS; RADIATIONS; SENSORS; SILICON; SI SEMICONDUCTOR DETECTORS; Instrumentation,INST

Citation Formats

Gjersdal, H, /Oslo U., Bolle, E, /Oslo U., Borri, M, /Turin U., Da Via, C, /Manchester U., Dorholt, O, /Oslo U., Fazio, S, /Calabria U., Grenier, P, /SLAC, Grinstein, S. /Barcelona U., Hansson, P, /SLAC, Hasi, J, /SLAC, Hugging, F, /Bonn U., Jackson, P, /SLAC, Kenney, C, /SLAC, Kocian, M, /SLAC, La Rosa, A, /CERN, Mastroberardino, A, /Calabria U., Nordahl, P, /Oslo U., Rivero, F, /Turin U., Rohne, O, /Oslo U., Sandaker, H, /Bergen U., Sjobaek, K, and /Oslo U. /Prague, Tech. U. /SLAC /Bonn U. /SUNY, Stony Brook /Bonn U. /SLAC. Tracking Efficiency And Charge Sharing of 3D Silicon Sensors at Different Angles in a 1.4T Magnetic Field. United States: N. p., 2012. Web.
Gjersdal, H, /Oslo U., Bolle, E, /Oslo U., Borri, M, /Turin U., Da Via, C, /Manchester U., Dorholt, O, /Oslo U., Fazio, S, /Calabria U., Grenier, P, /SLAC, Grinstein, S. /Barcelona U., Hansson, P, /SLAC, Hasi, J, /SLAC, Hugging, F, /Bonn U., Jackson, P, /SLAC, Kenney, C, /SLAC, Kocian, M, /SLAC, La Rosa, A, /CERN, Mastroberardino, A, /Calabria U., Nordahl, P, /Oslo U., Rivero, F, /Turin U., Rohne, O, /Oslo U., Sandaker, H, /Bergen U., Sjobaek, K, & /Oslo U. /Prague, Tech. U. /SLAC /Bonn U. /SUNY, Stony Brook /Bonn U. /SLAC. Tracking Efficiency And Charge Sharing of 3D Silicon Sensors at Different Angles in a 1.4T Magnetic Field. United States.
Gjersdal, H, /Oslo U., Bolle, E, /Oslo U., Borri, M, /Turin U., Da Via, C, /Manchester U., Dorholt, O, /Oslo U., Fazio, S, /Calabria U., Grenier, P, /SLAC, Grinstein, S. /Barcelona U., Hansson, P, /SLAC, Hasi, J, /SLAC, Hugging, F, /Bonn U., Jackson, P, /SLAC, Kenney, C, /SLAC, Kocian, M, /SLAC, La Rosa, A, /CERN, Mastroberardino, A, /Calabria U., Nordahl, P, /Oslo U., Rivero, F, /Turin U., Rohne, O, /Oslo U., Sandaker, H, /Bergen U., Sjobaek, K, and /Oslo U. /Prague, Tech. U. /SLAC /Bonn U. /SUNY, Stony Brook /Bonn U. /SLAC. Mon . "Tracking Efficiency And Charge Sharing of 3D Silicon Sensors at Different Angles in a 1.4T Magnetic Field". United States.
@article{osti_1043231,
title = {Tracking Efficiency And Charge Sharing of 3D Silicon Sensors at Different Angles in a 1.4T Magnetic Field},
author = {Gjersdal, H and /Oslo U. and Bolle, E and /Oslo U. and Borri, M and /Turin U. and Da Via, C and /Manchester U. and Dorholt, O and /Oslo U. and Fazio, S and /Calabria U. and Grenier, P and /SLAC and Grinstein, S. /Barcelona U. and Hansson, P and /SLAC and Hasi, J and /SLAC and Hugging, F and /Bonn U. and Jackson, P and /SLAC and Kenney, C and /SLAC and Kocian, M and /SLAC and La Rosa, A and /CERN and Mastroberardino, A and /Calabria U. and Nordahl, P and /Oslo U. and Rivero, F and /Turin U. and Rohne, O and /Oslo U. and Sandaker, H and /Bergen U. and Sjobaek, K and /Oslo U. /Prague, Tech. U. /SLAC /Bonn U. /SUNY, Stony Brook /Bonn U. /SLAC},
abstractNote = {A 3D silicon sensor fabricated at Stanford with electrodes penetrating throughout the entire silicon wafer and with active edges was tested in a 1.4 T magnetic field with a 180 GeV/c pion beam at the CERN SPS in May 2009. The device under test was bump-bonded to the ATLAS pixel FE-I3 readout electronics chip. Three readout electrodes were used to cover the 400 {micro}m long pixel side, this resulting in a p-n inter-electrode distance of {approx} 71 {micro}m. Its behavior was confronted with a planar sensor of the type presently installed in the ATLAS inner tracker. Time over threshold, charge sharing and tracking efficiency data were collected at zero and 15{sup o} angles with and without magnetic field. The latest is the angular configuration expected for the modules of the Insertable B-Layer (IBL) currently under study for the LHC phase 1 upgrade expected in 2014.},
doi = {},
journal = {Nucl.Instrum.Meth.A636:S42-S49,2011},
number = ,
volume = ,
place = {United States},
year = {2012},
month = {5}
}

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