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Title: Fabrication of 3D Silicon Sensors

Abstract

Silicon sensors with a three-dimensional (3-D) architecture, in which the n and p electrodes penetrate through the entire substrate, have many advantages over planar silicon sensors including radiation hardness, fast time response, active edge and dual readout capabilities. The fabrication of 3D sensors is however rather complex. In recent years, there have been worldwide activities on 3D fabrication. SINTEF in collaboration with Stanford Nanofabrication Facility have successfully fabricated the original (single sided double column type) 3D detectors in two prototype runs and the third run is now on-going. This paper reports the status of this fabrication work and the resulted yield. The work of other groups such as the development of double sided 3D detectors is also briefly reported.

Authors:
; ; ; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1042666
Report Number(s):
SLAC-PUB-15066
TRN: US201212%%870
DOE Contract Number:  
AC02-76SF00515
Resource Type:
Conference
Journal Name:
PoS VERTEX2010:022,2010
Additional Journal Information:
Conference: Prepared for Vertex 2010: 19th International Workshop on Vertex Detectors, Loch Lomond, Glasgow, Scotland, United Kingdom, 6-11 Jun 2010
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION; ARCHITECTURE; ELECTRODES; FABRICATION; HARDNESS; RADIATIONS; SENSORS; SILICON; Instrumentation,INST

Citation Formats

Kok, A., Hansen, T.E., Hansen, T.A., Lietaer, N., Summanwar, A., /SINTEF, Oslo, Kenney, C., Hasi, J., /SLAC, Da Via, C., /Manchester U., Parker, S.I., and /Hawaii U. Fabrication of 3D Silicon Sensors. United States: N. p., 2012. Web.
Kok, A., Hansen, T.E., Hansen, T.A., Lietaer, N., Summanwar, A., /SINTEF, Oslo, Kenney, C., Hasi, J., /SLAC, Da Via, C., /Manchester U., Parker, S.I., & /Hawaii U. Fabrication of 3D Silicon Sensors. United States.
Kok, A., Hansen, T.E., Hansen, T.A., Lietaer, N., Summanwar, A., /SINTEF, Oslo, Kenney, C., Hasi, J., /SLAC, Da Via, C., /Manchester U., Parker, S.I., and /Hawaii U. Wed . "Fabrication of 3D Silicon Sensors". United States. https://www.osti.gov/servlets/purl/1042666.
@article{osti_1042666,
title = {Fabrication of 3D Silicon Sensors},
author = {Kok, A. and Hansen, T.E. and Hansen, T.A. and Lietaer, N. and Summanwar, A. and /SINTEF, Oslo and Kenney, C. and Hasi, J. and /SLAC and Da Via, C. and /Manchester U. and Parker, S.I. and /Hawaii U.},
abstractNote = {Silicon sensors with a three-dimensional (3-D) architecture, in which the n and p electrodes penetrate through the entire substrate, have many advantages over planar silicon sensors including radiation hardness, fast time response, active edge and dual readout capabilities. The fabrication of 3D sensors is however rather complex. In recent years, there have been worldwide activities on 3D fabrication. SINTEF in collaboration with Stanford Nanofabrication Facility have successfully fabricated the original (single sided double column type) 3D detectors in two prototype runs and the third run is now on-going. This paper reports the status of this fabrication work and the resulted yield. The work of other groups such as the development of double sided 3D detectors is also briefly reported.},
doi = {},
journal = {PoS VERTEX2010:022,2010},
number = ,
volume = ,
place = {United States},
year = {2012},
month = {6}
}

Conference:
Other availability
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