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Title: Fabrication of 3D Silicon Sensors

Conference · · PoS VERTEX2010:022,2010
OSTI ID:1042666

Silicon sensors with a three-dimensional (3-D) architecture, in which the n and p electrodes penetrate through the entire substrate, have many advantages over planar silicon sensors including radiation hardness, fast time response, active edge and dual readout capabilities. The fabrication of 3D sensors is however rather complex. In recent years, there have been worldwide activities on 3D fabrication. SINTEF in collaboration with Stanford Nanofabrication Facility have successfully fabricated the original (single sided double column type) 3D detectors in two prototype runs and the third run is now on-going. This paper reports the status of this fabrication work and the resulted yield. The work of other groups such as the development of double sided 3D detectors is also briefly reported.

Research Organization:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
DOE Contract Number:
AC02-76SF00515
OSTI ID:
1042666
Report Number(s):
SLAC-PUB-15066; TRN: US201212%%870
Journal Information:
PoS VERTEX2010:022,2010, Conference: Prepared for Vertex 2010: 19th International Workshop on Vertex Detectors, Loch Lomond, Glasgow, Scotland, United Kingdom, 6-11 Jun 2010
Country of Publication:
United States
Language:
English

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