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Title: Method of fabricating conductive electrodes on the front and backside of a thin film structure

Abstract

A method of fabricating a thin film device having conductive front and backside electrodes or contacts. Top-side cavities are first formed on a first dielectric layer, followed by the deposition of a metal layer on the first dielectric layer to fill the cavities. Defined metal structures are etched from the metal layer to include the cavity-filled metal, followed by depositing a second dielectric layer over the metal structures. Additional levels of defined metal structures may be formed in a similar manner with vias connecting metal structures between levels. After a final dielectric layer is deposited, a top surface of a metal structure of an uppermost metal layer is exposed through the final dielectric layer to form a front-side electrode, and a bottom surface of a cavity-filled portion of a metal structure of a lowermost metal layer is also exposed through the first dielectric layer to form a back-side electrode.

Inventors:
 [1];  [2]
  1. Roseville, CA
  2. Pleasanton, CA
Publication Date:
Research Org.:
USDOE
Sponsoring Org.:
USDOE
OSTI Identifier:
1042627
Patent Number(s):
8,183,111
Application Number:
12/959,232
Assignee:
Lawrence Livermore National Security, LLC (Livermore, CA)
DOE Contract Number:  
AC52-07NA27344
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Tabada, Phillipe J, Tabada, legal representative, Melody, and Pannu, Satinderpall S. Method of fabricating conductive electrodes on the front and backside of a thin film structure. United States: N. p., 2011. Web.
Tabada, Phillipe J, Tabada, legal representative, Melody, & Pannu, Satinderpall S. Method of fabricating conductive electrodes on the front and backside of a thin film structure. United States.
Tabada, Phillipe J, Tabada, legal representative, Melody, and Pannu, Satinderpall S. Sun . "Method of fabricating conductive electrodes on the front and backside of a thin film structure". United States. https://www.osti.gov/servlets/purl/1042627.
@article{osti_1042627,
title = {Method of fabricating conductive electrodes on the front and backside of a thin film structure},
author = {Tabada, Phillipe J and Tabada, legal representative, Melody and Pannu, Satinderpall S},
abstractNote = {A method of fabricating a thin film device having conductive front and backside electrodes or contacts. Top-side cavities are first formed on a first dielectric layer, followed by the deposition of a metal layer on the first dielectric layer to fill the cavities. Defined metal structures are etched from the metal layer to include the cavity-filled metal, followed by depositing a second dielectric layer over the metal structures. Additional levels of defined metal structures may be formed in a similar manner with vias connecting metal structures between levels. After a final dielectric layer is deposited, a top surface of a metal structure of an uppermost metal layer is exposed through the final dielectric layer to form a front-side electrode, and a bottom surface of a cavity-filled portion of a metal structure of a lowermost metal layer is also exposed through the first dielectric layer to form a back-side electrode.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2011},
month = {5}
}

Patent:

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