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Title: Oxides Heterostructures for Nanoelectronics

Abstract

We summarise in this paper the work of two groups focusing on the synthesis and characterisation of functional oxide for nanoelectronic applications. In the first section, we discuss the growth by liquid-injection MOCVD of oxides heterostructures. Interface engineering for the minimisation of silicate formation during the growth of polycrystalline SrTiO{sub 3} on Si is first presented. It is realised via the change of reactant flow or chemical nature at the Si surface. We then report on the epitaxy on oxide substrates of manganites films and superlattices and on their magnetic and electrical properties. La{sub 0.7}Sr{sub 0.3}MnO{sub 3} and La{sub 0.8}MnO{sub 3-{delta}} as well as multiferroic hexagonal ReMnO{sub 3} manganites are considered. We show that the film thickness and related strain may be used to tune the properties. Finally, we demonstrate the growth of MgO nanowires by CVD at a moderate temperature of 600 C, using gold as a catalyst. In the second section, we discuss the growth of epitaxial oxide heterostructures by MBE. First, the direct epitaxy of SrTiO{sub 3} on Si is considered. Issues and control of the SrTiO{sub 3}/Si interface are discussed. An abrupt interface is achieved. We show that SrTiO{sub 3} on Si can be used asmore » a buffer layer for the epitaxy of various perovskite oxides such as LaAlO{sub 3} or La{sub 0.7}Sr0.3MnO{sub 3}. La{sub 0.7}Sr{sub 0.3}MnO{sub 3} films are ferromagnetic and metallic at room temperature. The epitaxial growth of complex oxides on Si wafers opens up the route to the integration of a wide variety of functionalities in nanoelectronics. Finally, we discuss the monolithic integration of III-V compounds such as InP on Si using epitaxial SrTiO{sub 3} buffer layers for the future integration of optics on Si.« less

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE SC OFFICE OF SCIENCE (SC)
OSTI Identifier:
1042247
Report Number(s):
BNL-97925-2012-JA
Journal ID: ISSN 1475-7435; TRN: US201212%%658
DOE Contract Number:  
DE-AC02-98CH10886
Resource Type:
Journal Article
Journal Name:
International Journal of Nanotechnology
Additional Journal Information:
Journal Volume: 7; Journal Issue: 4/5/6/7/8; Journal ID: ISSN 1475-7435
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; ELECTRICAL PROPERTIES; EPITAXY; FILMS; GOLD; GROWTH; INTERFACES; LAYERS; MAGNESIUM OXIDES; MAGNETIC PROPERTIES; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; OPTICS; ORGANOMETALLIC COMPOUNDS; OXIDES; PEROVSKITES; QUANTUM WIRES; SILICON; SILICATES; STRAINS; STRONTIUM TITANATES; SUPERLATTICES; SYNTHESIS; THICKNESS; THIN FILMS

Citation Formats

Dubourdieu, C, Gelard, I, Salicio, O, Saint-Girons, G, Vilquin, B, and Hollinger, G. Oxides Heterostructures for Nanoelectronics. United States: N. p., 2011. Web.
Dubourdieu, C, Gelard, I, Salicio, O, Saint-Girons, G, Vilquin, B, & Hollinger, G. Oxides Heterostructures for Nanoelectronics. United States.
Dubourdieu, C, Gelard, I, Salicio, O, Saint-Girons, G, Vilquin, B, and Hollinger, G. Sat . "Oxides Heterostructures for Nanoelectronics". United States.
@article{osti_1042247,
title = {Oxides Heterostructures for Nanoelectronics},
author = {Dubourdieu, C and Gelard, I and Salicio, O and Saint-Girons, G and Vilquin, B and Hollinger, G},
abstractNote = {We summarise in this paper the work of two groups focusing on the synthesis and characterisation of functional oxide for nanoelectronic applications. In the first section, we discuss the growth by liquid-injection MOCVD of oxides heterostructures. Interface engineering for the minimisation of silicate formation during the growth of polycrystalline SrTiO{sub 3} on Si is first presented. It is realised via the change of reactant flow or chemical nature at the Si surface. We then report on the epitaxy on oxide substrates of manganites films and superlattices and on their magnetic and electrical properties. La{sub 0.7}Sr{sub 0.3}MnO{sub 3} and La{sub 0.8}MnO{sub 3-{delta}} as well as multiferroic hexagonal ReMnO{sub 3} manganites are considered. We show that the film thickness and related strain may be used to tune the properties. Finally, we demonstrate the growth of MgO nanowires by CVD at a moderate temperature of 600 C, using gold as a catalyst. In the second section, we discuss the growth of epitaxial oxide heterostructures by MBE. First, the direct epitaxy of SrTiO{sub 3} on Si is considered. Issues and control of the SrTiO{sub 3}/Si interface are discussed. An abrupt interface is achieved. We show that SrTiO{sub 3} on Si can be used as a buffer layer for the epitaxy of various perovskite oxides such as LaAlO{sub 3} or La{sub 0.7}Sr0.3MnO{sub 3}. La{sub 0.7}Sr{sub 0.3}MnO{sub 3} films are ferromagnetic and metallic at room temperature. The epitaxial growth of complex oxides on Si wafers opens up the route to the integration of a wide variety of functionalities in nanoelectronics. Finally, we discuss the monolithic integration of III-V compounds such as InP on Si using epitaxial SrTiO{sub 3} buffer layers for the future integration of optics on Si.},
doi = {},
url = {https://www.osti.gov/biblio/1042247}, journal = {International Journal of Nanotechnology},
issn = {1475-7435},
number = 4/5/6/7/8,
volume = 7,
place = {United States},
year = {2011},
month = {12}
}