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Title: Defect Levels of Indium-doped CdMnTe Crystals

Abstract

Using photoluminescence (PL) and current deep-level transient spectroscopy (I-DLTS), we investigated the electronic defects of indium-doped detector-grade CdMnTe:In (CMT:In) crystals grown by the vertical Bridgman method. We similarly analyzed CdZnTe:In (CZT:In) and undoped CdMnTe (CMT) crystals grown under the amount of same level of excess Te and/or indium doping level to detail the fundamental properties of the electronic defect structure more readily. Extended defects, existing in all the samples, were revealed by synchrotron white beam x-ray diffraction topography and scanning electron microscopy. The electronic structure of CMT is very similar to that of CZT, with shallow traps, A-centers, Cd vacancies, deep levels, and Te antisites. The 1.1-eV deep level, revealed by PL in earlier studies of CZT and CdTe, were attributed to dislocation-induced defects. In our I-DLTS measurements, the 1.1-eV traps showed different activation energies with applied bias voltage and an exponential dependence on the trap-filling time, which are typical characteristics of dislocation-induced defects. We propose a new defect-trap model for indium-doped CMT crystals.

Authors:
; ; ; ; ; ; ;
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE SC OFFICE OF SCIENCE (SC)
OSTI Identifier:
1041851
Report Number(s):
BNL-97529-2012-JA
Journal ID: ISSN 0021-8979; JAPIAU; TRN: US201212%%263
DOE Contract Number:  
DE-AC02-98CH10886
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 109; Journal Issue: 11; Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; A CENTERS; BRIDGMAN METHOD; CADMIUM COMPOUNDS; CRYSTAL GROWTH; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; DISLOCATIONS; ELECTRONIC STRUCTURE; INDIUM; MANGANESE COMPOUNDS; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SPECTROSCOPY; SYNCHROTRONS; TOPOGRAPHY; TRANSIENTS; VACANCIES; X-RAY DIFFRACTION

Citation Formats

Kim, K, Bolotinikov, A, Camarda, G, Gul, R, Hossain, A, Yang, G, Cui, Y, and James, R. Defect Levels of Indium-doped CdMnTe Crystals. United States: N. p., 2011. Web. doi:10.1063/1.3594715.
Kim, K, Bolotinikov, A, Camarda, G, Gul, R, Hossain, A, Yang, G, Cui, Y, & James, R. Defect Levels of Indium-doped CdMnTe Crystals. United States. https://doi.org/10.1063/1.3594715
Kim, K, Bolotinikov, A, Camarda, G, Gul, R, Hossain, A, Yang, G, Cui, Y, and James, R. Sat . "Defect Levels of Indium-doped CdMnTe Crystals". United States. https://doi.org/10.1063/1.3594715.
@article{osti_1041851,
title = {Defect Levels of Indium-doped CdMnTe Crystals},
author = {Kim, K and Bolotinikov, A and Camarda, G and Gul, R and Hossain, A and Yang, G and Cui, Y and James, R},
abstractNote = {Using photoluminescence (PL) and current deep-level transient spectroscopy (I-DLTS), we investigated the electronic defects of indium-doped detector-grade CdMnTe:In (CMT:In) crystals grown by the vertical Bridgman method. We similarly analyzed CdZnTe:In (CZT:In) and undoped CdMnTe (CMT) crystals grown under the amount of same level of excess Te and/or indium doping level to detail the fundamental properties of the electronic defect structure more readily. Extended defects, existing in all the samples, were revealed by synchrotron white beam x-ray diffraction topography and scanning electron microscopy. The electronic structure of CMT is very similar to that of CZT, with shallow traps, A-centers, Cd vacancies, deep levels, and Te antisites. The 1.1-eV deep level, revealed by PL in earlier studies of CZT and CdTe, were attributed to dislocation-induced defects. In our I-DLTS measurements, the 1.1-eV traps showed different activation energies with applied bias voltage and an exponential dependence on the trap-filling time, which are typical characteristics of dislocation-induced defects. We propose a new defect-trap model for indium-doped CMT crystals.},
doi = {10.1063/1.3594715},
url = {https://www.osti.gov/biblio/1041851}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 11,
volume = 109,
place = {United States},
year = {2011},
month = {12}
}