Triaxial Stress Distributions in Cu / low-k Interconnect Features

Journal Article · Sat Dec 31 00:00:00 EST 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3549876· OSTI ID:1041791

Murray, C; Besser, P; Ryan, E; Jordan-Sweet, J

The distribution of triaxial stresses within single damascene Cu/organosilicate interconnect structures as a function of linewidth, ranging from 45 to 250 nm, was measured using x-ray diffraction. Least-squares minimization techniques were employed to determine the volume-averaged stress tensors of the Cu features. Longitudinal Cu stress values increased for linewidths below 100 nm, while transverse stresses decreased with decreasing linewidth below 100 nm due to the interplay between the Cu microstructure and the feature geometry. Large tensile out-of-plane stresses were observed in all of the lines demonstrating the constraint imposed by the barrier layers that encapsulate the Cu.

• Research Organization: Brookhaven National Lab. (BNL), Upton, NY (United States)
• Sponsoring Organization: USDOE SC OFFICE OF SCIENCE (SC)
• DOE Contract Number: DE-AC02-98CH10886
• OSTI ID: 1041791
• Report Number(s): BNL-97469-2012-JA; APPLAB; TRN: US1202709
• Journal Information: Applied Physics Letters, Vol. 98, Issue 6; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

12 MANAGEMENT OF RADIOACTIVE WASTES, AND NON-RADIOACTIVE WASTES FROM NUCLEAR FACILITIES
36 MATERIALS SCIENCE
COPPER
CRYSTAL STRUCTURE
DISTRIBUTION
DIELECTRIC MATERIALS
GLASS
MICROSTRUCTURE
MINIMIZATION
STRESSES
TENSILE PROPERTIES
TENSORS
THIN FILMS
X-RAY DIFFRACTION