Stacking Faults Created by the Combined Deflection of Threading Dislocations of Burgers Vector c and cplusa during the Physical Vapor Transport Growth of 4H-SiC

Journal Article · Sat Dec 31 00:00:00 EST 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3597226· OSTI ID:1041785

Dudley, M; Wu, F; Wang, H; Byrappa, S; Raghothamachar, B; Choi, G; Sun, S; Sanchez, E; Hansen, D; Drachev, R

Observations have been made, using synchrotron white beam x-ray topography, of stacking faults in 4H-SiC with fault vectors of kind 1/6 <20{bar 2}3>. A mechanism has been postulated for their formation which involves overgrowth by a macrostep of the surface outcrop of a c-axis threading screw dislocation, with two c/2-height surface spiral steps, which has several threading dislocations of Burgers vector c+a, with c-height spiral steps, which protrude onto the terrace in between the c/2-risers. Such overgrowth processes deflect the threading dislocations onto the basal plane, enabling them to exit the crystal and thereby providing a mechanism to lower their densities.

• Research Organization: Brookhaven National Lab. (BNL), Upton, NY (United States)
• Sponsoring Organization: USDOE SC OFFICE OF SCIENCE (SC)
• DOE Contract Number: DE-AC02-98CH10886
• OSTI ID: 1041785
• Report Number(s): BNL-97463-2012-JA; APPLAB; TRN: US201212%%197
• Journal Information: Applied Physics Letters, Vol. 98, Issue 23; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BURGERS VECTOR
CRYSTALS
DISLOCATIONS
CRYSTAL GROWTH
SCREW DISLOCATIONS
SILICON CARBIDES
STACKING FAULTS
SURFACES
TOPOGRAPHY
VAPORS
X-RAY DIFFRACTION