Diamondoid monolayers as electron emitters

Patent · Tue Apr 10 00:00:00 EDT 2012

OSTI ID:1040877

Yang, Wanli ^[1]; Fabbri, Jason D ^[2]; Melosh, Nicholas A ^[3]; Hussain, Zahid ^[4]; Shen, Zhi-Xun ^[5]

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1. El Cerrito, CA
2. San Francisco, CA
3. Menlo Park, CA
4. Orinda, CA
5. Stanford, CA

Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.

• Research Organization: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC02-05CH11231; AC02-76SF00515
• Assignee: The Board of Trustees of the Leland Stanford Junior University (Stanford, CA); The Regents of the University of California (Oakland, CA)
• Patent Number(s): 8,154,185
• Application Number: US patent applicaiton 11/704,910
• OSTI ID: 1040877
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE