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Title: Diamondoid monolayers as electron emitters

Abstract

Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.

Inventors:
 [1];  [2];  [3];  [4];  [5]
  1. El Cerrito, CA
  2. San Francisco, CA
  3. Menlo Park, CA
  4. Orinda, CA
  5. Stanford, CA
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1040877
Patent Number(s):
8,154,185
Application Number:
US patent applicaiton 11/704,910
Assignee:
The Board of Trustees of the Leland Stanford Junior University (Stanford, CA); The Regents of the University of California (Oakland, CA) LBNL
DOE Contract Number:  
AC02-05CH11231; AC02-76SF00515
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Yang, Wanli, Fabbri, Jason D, Melosh, Nicholas A, Hussain, Zahid, and Shen, Zhi-Xun. Diamondoid monolayers as electron emitters. United States: N. p., 2012. Web.
Yang, Wanli, Fabbri, Jason D, Melosh, Nicholas A, Hussain, Zahid, & Shen, Zhi-Xun. Diamondoid monolayers as electron emitters. United States.
Yang, Wanli, Fabbri, Jason D, Melosh, Nicholas A, Hussain, Zahid, and Shen, Zhi-Xun. Tue . "Diamondoid monolayers as electron emitters". United States. https://www.osti.gov/servlets/purl/1040877.
@article{osti_1040877,
title = {Diamondoid monolayers as electron emitters},
author = {Yang, Wanli and Fabbri, Jason D and Melosh, Nicholas A and Hussain, Zahid and Shen, Zhi-Xun},
abstractNote = {Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Apr 10 00:00:00 EDT 2012},
month = {Tue Apr 10 00:00:00 EDT 2012}
}

Patent:

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