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Title: Effect of Oxygen Gas Pressure on the Kinetics of Alumina Film Growth During the Oxidation of Al(111) at Room Temperature

Abstract

We have studied the effect of oxygen pressure on the self-limiting oxidation of an Al(111) surface at room temperature for oxygen pressures from 1 x 10{sup -8} to 5 Torr. Using x-ray photoelectron spectroscopy measurements, we monitor the oxidation kinetics and the oxide film thickness for different oxidation times and pressures. After a rapid initial growth stage, the oxide film reaches a saturated thickness, which depends on the oxygen pressure. The kinetic potential, oxide growth rate, oxide film limiting thickness, and the density of oxygen anions on the oxide surface are determined by the measured oxidation kinetics. These quantities show a Langmuir isotherm dependence on the oxygen gas pressure.

Authors:
; ; ;
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL) Center for Functional Nanomaterials
Sponsoring Org.:
USDOE SC OFFICE OF SCIENCE (SC)
OSTI Identifier:
1040546
Report Number(s):
BNL-95410-2011-JA
Journal ID: ISSN 1098-0121; R&D Project: 2011-BNL-NC001-BUDG; KC020401H; TRN: US201210%%722
DOE Contract Number:  
DE-AC02-98CH10886
Resource Type:
Journal Article
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Volume: 84; Journal Issue: 12; Journal ID: ISSN 1098-0121
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANIONS; ISOTHERMS; KINETICS; MONITORS; OXIDATION; OXIDES; OXYGEN; THICKNESS; X-RAY PHOTOELECTRON SPECTROSCOPY; functional nanomaterials

Citation Formats

Zhou, G., Starr, D., Cai, N., and Muller, K. Effect of Oxygen Gas Pressure on the Kinetics of Alumina Film Growth During the Oxidation of Al(111) at Room Temperature. United States: N. p., 2011. Web.
Zhou, G., Starr, D., Cai, N., & Muller, K. Effect of Oxygen Gas Pressure on the Kinetics of Alumina Film Growth During the Oxidation of Al(111) at Room Temperature. United States.
Zhou, G., Starr, D., Cai, N., and Muller, K. Thu . "Effect of Oxygen Gas Pressure on the Kinetics of Alumina Film Growth During the Oxidation of Al(111) at Room Temperature". United States.
@article{osti_1040546,
title = {Effect of Oxygen Gas Pressure on the Kinetics of Alumina Film Growth During the Oxidation of Al(111) at Room Temperature},
author = {Zhou, G. and Starr, D. and Cai, N. and Muller, K.},
abstractNote = {We have studied the effect of oxygen pressure on the self-limiting oxidation of an Al(111) surface at room temperature for oxygen pressures from 1 x 10{sup -8} to 5 Torr. Using x-ray photoelectron spectroscopy measurements, we monitor the oxidation kinetics and the oxide film thickness for different oxidation times and pressures. After a rapid initial growth stage, the oxide film reaches a saturated thickness, which depends on the oxygen pressure. The kinetic potential, oxide growth rate, oxide film limiting thickness, and the density of oxygen anions on the oxide surface are determined by the measured oxidation kinetics. These quantities show a Langmuir isotherm dependence on the oxygen gas pressure.},
doi = {},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
issn = {1098-0121},
number = 12,
volume = 84,
place = {United States},
year = {2011},
month = {9}
}