Effect of Oxygen Gas Pressure on the Kinetics of Alumina Film Growth During the Oxidation of Al(111) at Room Temperature
Journal Article
·
· Physical Review. B, Condensed Matter and Materials Physics
OSTI ID:1040546
We have studied the effect of oxygen pressure on the self-limiting oxidation of an Al(111) surface at room temperature for oxygen pressures from 1 x 10{sup -8} to 5 Torr. Using x-ray photoelectron spectroscopy measurements, we monitor the oxidation kinetics and the oxide film thickness for different oxidation times and pressures. After a rapid initial growth stage, the oxide film reaches a saturated thickness, which depends on the oxygen pressure. The kinetic potential, oxide growth rate, oxide film limiting thickness, and the density of oxygen anions on the oxide surface are determined by the measured oxidation kinetics. These quantities show a Langmuir isotherm dependence on the oxygen gas pressure.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
- Sponsoring Organization:
- USDOE SC OFFICE OF SCIENCE (SC)
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 1040546
- Report Number(s):
- BNL-95410-2011-JA; R&D Project: 2011-BNL-NC001-BUDG; KC020401H; TRN: US201210%%722
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 84, Issue 12; ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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