Epitaxial growth of CoxMnySiz (111) thin films in the compositional range around the Heusler alloy Co2MnSi
Epitaxial growth and structural properties of Co{sub x}Mn{sub y}Si{sub z} thin films on Ge (111) substrates, including the Heusler alloy Co{sub 2}MnSi (111), have been studied using combinatorial molecular beam epitaxy (MBE) techniques. In situ reflection high energy electron diffraction and ex situ x-ray diffraction experiments show that high quality coherent MBE growth with fcc (111) stacking can be achieved over a relatively large composition space that includes Co{sub 2}MnSi. The highest structural and chemical ordering is observed near the composition of Co{sub 0.63}Mn{sub 0.14}Si{sub 0.23} rather than that at the Heusler stoichiometry of Co{sub 2}MnSi. The in-plane crystallographic axis of the fcc film exhibits a 60{sup o} rotation with respect to that of the Ge substrate. The rotation appears to be originated at the film-substrate interface, as a result of the symmetry and stacking of the Ge (111) surface reconstruction.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE SC OFFICE OF SCIENCE (SC)
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 1040504
- Report Number(s):
- BNL-96283-2011-JA; 39KC02000; TRN: US201210%%680
- Journal Information:
- Journal of Vacuum Science and Technology B, Vol. 29, Issue 3; ISSN 1071-1023
- Country of Publication:
- United States
- Language:
- English
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