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Title: 3D-FBK Pixel Sensors: Recent Beam Tests Results with Irradiated Devices

Abstract

The Pixel Detector is the innermost part of the ATLAS experiment tracking device at the Large Hadron Collider, and plays a key role in the reconstruction of the primary vertices from the collisions and secondary vertices produced by short-lived particles. To cope with the high level of radiation produced during the collider operation, it is planned to add to the present three layers of silicon pixel sensors which constitute the Pixel Detector, an additional layer (Insertable B-Layer, or IBL) of sensors. 3D silicon sensors are one of the technologies which are under study for the IBL. 3D silicon technology is an innovative combination of very-large-scale integration and Micro-Electro-Mechanical-Systems where electrodes are fabricated inside the silicon bulk instead of being implanted on the wafer surfaces. 3D sensors, with electrodes fully or partially penetrating the silicon substrate, are currently fabricated at different processing facilities in Europe and USA. This paper reports on the 2010 June beam test results for irradiated 3D devices produced at FBK (Trento, Italy). The performance of these devices, all bump-bonded with the ATLAS pixel FE-I3 read-out chip, is compared to that observed before irradiation in a previous beam test.

Authors:
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Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1039550
Report Number(s):
SLAC-REPRINT-2012-065
Journal ID: ISSN 0168-9002; NIMAER; TRN: US1202173
DOE Contract Number:  
AC02-76SF00515
Resource Type:
Journal Article
Journal Name:
Nuclear Instruments and Methods in Physics Research, Section A
Additional Journal Information:
Journal Volume: 650; Journal Issue: 1; Journal ID: ISSN 0168-9002
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; ELECTRODES; HADRONS; IRRADIATION; PERFORMANCE; PROCESSING; RADIATION DETECTORS; RADIATIONS; SENSORS; SILICON; Instrumentation,INST

Citation Formats

Micelli, A, /INFN, Trieste /Udine U., Helle, K, /Bergen U., Sandaker, H, /Bergen U., Stugu, B, /Bergen U., Barbero, M, /Bonn U., Hugging, F, /Bonn U., Karagounis, M, /Bonn U., Kostyukhin, V, /Bonn U., Kruger, H, /Bonn U., Tsung, J W, /Bonn U., Wermes, N, /Bonn U., Capua, M, /Calabria U., Fazio, S, /Calabria U., Mastroberardino, A, /Calabria U., Susinno, G, /Calabria U., Gallrapp, C, /CERN, Di Girolamo, B, /CERN, Dobos, D, /CERN, La Rosa, A, /CERN, Pernegger, H, /CERN, Roe, S, and /CERN /Prague, Tech. U. /Prague, Tech. U. /Freiburg U. /Freiburg U. /Freiburg U. /INFN, Genoa /Genoa U. /INFN, Genoa /Genoa U. /INFN, Genoa /Genoa U. /INFN, Genoa /Genoa U. /INFN, Genoa /Genoa U. /Glasgow U. /Glasgow U. /Glasgow U. /Hawaii U. /Barcelona, IFAE /Barcelona, IFAE /LBL, Berkeley /Barcelona, IFAE /LBL, Berkeley /LBL, Berkeley /Manchester U. /Manchester U. /Manchester U. /Manchester U. /Manchester U. /Manchester U. /Manchester U. /Manchester U. /Manchester U. /New Mexico U. /New Mexico U. /Oslo U. /Oslo U. /Oslo U. /Oslo U. /Oslo U. /SLAC /SLAC /SLAC /SLAC /SLAC /SLAC /SLAC /SLAC /SLAC /SUNY, Stony Brook /SUNY, Stony Brook /SUNY, Stony Brook /INFN, Trento /Trento U. /INFN, Trento /Trento U. /INFN, Trento /Trento U. /INFN, Trieste /Udine U. /INFN, Trieste /Udine U. /INFN, Trieste /Udine U. /INFN, Trieste /Udine U. /INFN, Trieste /Udine U. /INFN, Trieste /Udine U. /Barcelona, Inst. Microelectron. /Barcelona, Inst. Microelectron. /Barcelona, Inst. Microelectron. /Fond. Bruno Kessler, Trento /Fond. Bruno Kessler, Trento /Fond. Bruno Kessler, Trento /Fond. Bruno Kessler, Trento /Fond. Bruno Kessler, Trento /SINTEF, Oslo /SINTEF, Oslo /SINTEF, Oslo /SINTEF, Oslo /VTT Electronics, Espoo /VTT Electronics, Espoo. 3D-FBK Pixel Sensors: Recent Beam Tests Results with Irradiated Devices. United States: N. p., 2012. Web.
Micelli, A, /INFN, Trieste /Udine U., Helle, K, /Bergen U., Sandaker, H, /Bergen U., Stugu, B, /Bergen U., Barbero, M, /Bonn U., Hugging, F, /Bonn U., Karagounis, M, /Bonn U., Kostyukhin, V, /Bonn U., Kruger, H, /Bonn U., Tsung, J W, /Bonn U., Wermes, N, /Bonn U., Capua, M, /Calabria U., Fazio, S, /Calabria U., Mastroberardino, A, /Calabria U., Susinno, G, /Calabria U., Gallrapp, C, /CERN, Di Girolamo, B, /CERN, Dobos, D, /CERN, La Rosa, A, /CERN, Pernegger, H, /CERN, Roe, S, & /CERN /Prague, Tech. U. /Prague, Tech. U. /Freiburg U. /Freiburg U. /Freiburg U. /INFN, Genoa /Genoa U. /INFN, Genoa /Genoa U. /INFN, Genoa /Genoa U. /INFN, Genoa /Genoa U. /INFN, Genoa /Genoa U. /Glasgow U. /Glasgow U. /Glasgow U. /Hawaii U. /Barcelona, IFAE /Barcelona, IFAE /LBL, Berkeley /Barcelona, IFAE /LBL, Berkeley /LBL, Berkeley /Manchester U. /Manchester U. /Manchester U. /Manchester U. /Manchester U. /Manchester U. /Manchester U. /Manchester U. /Manchester U. /New Mexico U. /New Mexico U. /Oslo U. /Oslo U. /Oslo U. /Oslo U. /Oslo U. /SLAC /SLAC /SLAC /SLAC /SLAC /SLAC /SLAC /SLAC /SLAC /SUNY, Stony Brook /SUNY, Stony Brook /SUNY, Stony Brook /INFN, Trento /Trento U. /INFN, Trento /Trento U. /INFN, Trento /Trento U. /INFN, Trieste /Udine U. /INFN, Trieste /Udine U. /INFN, Trieste /Udine U. /INFN, Trieste /Udine U. /INFN, Trieste /Udine U. /INFN, Trieste /Udine U. /Barcelona, Inst. Microelectron. /Barcelona, Inst. Microelectron. /Barcelona, Inst. Microelectron. /Fond. Bruno Kessler, Trento /Fond. Bruno Kessler, Trento /Fond. Bruno Kessler, Trento /Fond. Bruno Kessler, Trento /Fond. Bruno Kessler, Trento /SINTEF, Oslo /SINTEF, Oslo /SINTEF, Oslo /SINTEF, Oslo /VTT Electronics, Espoo /VTT Electronics, Espoo. 3D-FBK Pixel Sensors: Recent Beam Tests Results with Irradiated Devices. United States.
Micelli, A, /INFN, Trieste /Udine U., Helle, K, /Bergen U., Sandaker, H, /Bergen U., Stugu, B, /Bergen U., Barbero, M, /Bonn U., Hugging, F, /Bonn U., Karagounis, M, /Bonn U., Kostyukhin, V, /Bonn U., Kruger, H, /Bonn U., Tsung, J W, /Bonn U., Wermes, N, /Bonn U., Capua, M, /Calabria U., Fazio, S, /Calabria U., Mastroberardino, A, /Calabria U., Susinno, G, /Calabria U., Gallrapp, C, /CERN, Di Girolamo, B, /CERN, Dobos, D, /CERN, La Rosa, A, /CERN, Pernegger, H, /CERN, Roe, S, and /CERN /Prague, Tech. U. /Prague, Tech. U. /Freiburg U. /Freiburg U. /Freiburg U. /INFN, Genoa /Genoa U. /INFN, Genoa /Genoa U. /INFN, Genoa /Genoa U. /INFN, Genoa /Genoa U. /INFN, Genoa /Genoa U. /Glasgow U. /Glasgow U. /Glasgow U. /Hawaii U. /Barcelona, IFAE /Barcelona, IFAE /LBL, Berkeley /Barcelona, IFAE /LBL, Berkeley /LBL, Berkeley /Manchester U. /Manchester U. /Manchester U. /Manchester U. /Manchester U. /Manchester U. /Manchester U. /Manchester U. /Manchester U. /New Mexico U. /New Mexico U. /Oslo U. /Oslo U. /Oslo U. /Oslo U. /Oslo U. /SLAC /SLAC /SLAC /SLAC /SLAC /SLAC /SLAC /SLAC /SLAC /SUNY, Stony Brook /SUNY, Stony Brook /SUNY, Stony Brook /INFN, Trento /Trento U. /INFN, Trento /Trento U. /INFN, Trento /Trento U. /INFN, Trieste /Udine U. /INFN, Trieste /Udine U. /INFN, Trieste /Udine U. /INFN, Trieste /Udine U. /INFN, Trieste /Udine U. /INFN, Trieste /Udine U. /Barcelona, Inst. Microelectron. /Barcelona, Inst. Microelectron. /Barcelona, Inst. Microelectron. /Fond. Bruno Kessler, Trento /Fond. Bruno Kessler, Trento /Fond. Bruno Kessler, Trento /Fond. Bruno Kessler, Trento /Fond. Bruno Kessler, Trento /SINTEF, Oslo /SINTEF, Oslo /SINTEF, Oslo /SINTEF, Oslo /VTT Electronics, Espoo /VTT Electronics, Espoo. Mon . "3D-FBK Pixel Sensors: Recent Beam Tests Results with Irradiated Devices". United States.
@article{osti_1039550,
title = {3D-FBK Pixel Sensors: Recent Beam Tests Results with Irradiated Devices},
author = {Micelli, A and /INFN, Trieste /Udine U. and Helle, K and /Bergen U. and Sandaker, H and /Bergen U. and Stugu, B and /Bergen U. and Barbero, M and /Bonn U. and Hugging, F and /Bonn U. and Karagounis, M and /Bonn U. and Kostyukhin, V and /Bonn U. and Kruger, H and /Bonn U. and Tsung, J W and /Bonn U. and Wermes, N and /Bonn U. and Capua, M and /Calabria U. and Fazio, S and /Calabria U. and Mastroberardino, A and /Calabria U. and Susinno, G and /Calabria U. and Gallrapp, C and /CERN and Di Girolamo, B and /CERN and Dobos, D and /CERN and La Rosa, A and /CERN and Pernegger, H and /CERN and Roe, S and /CERN /Prague, Tech. U. /Prague, Tech. U. /Freiburg U. /Freiburg U. /Freiburg U. /INFN, Genoa /Genoa U. /INFN, Genoa /Genoa U. /INFN, Genoa /Genoa U. /INFN, Genoa /Genoa U. /INFN, Genoa /Genoa U. /Glasgow U. /Glasgow U. /Glasgow U. /Hawaii U. /Barcelona, IFAE /Barcelona, IFAE /LBL, Berkeley /Barcelona, IFAE /LBL, Berkeley /LBL, Berkeley /Manchester U. /Manchester U. /Manchester U. /Manchester U. /Manchester U. /Manchester U. /Manchester U. /Manchester U. /Manchester U. /New Mexico U. /New Mexico U. /Oslo U. /Oslo U. /Oslo U. /Oslo U. /Oslo U. /SLAC /SLAC /SLAC /SLAC /SLAC /SLAC /SLAC /SLAC /SLAC /SUNY, Stony Brook /SUNY, Stony Brook /SUNY, Stony Brook /INFN, Trento /Trento U. /INFN, Trento /Trento U. /INFN, Trento /Trento U. /INFN, Trieste /Udine U. /INFN, Trieste /Udine U. /INFN, Trieste /Udine U. /INFN, Trieste /Udine U. /INFN, Trieste /Udine U. /INFN, Trieste /Udine U. /Barcelona, Inst. Microelectron. /Barcelona, Inst. Microelectron. /Barcelona, Inst. Microelectron. /Fond. Bruno Kessler, Trento /Fond. Bruno Kessler, Trento /Fond. Bruno Kessler, Trento /Fond. Bruno Kessler, Trento /Fond. Bruno Kessler, Trento /SINTEF, Oslo /SINTEF, Oslo /SINTEF, Oslo /SINTEF, Oslo /VTT Electronics, Espoo /VTT Electronics, Espoo},
abstractNote = {The Pixel Detector is the innermost part of the ATLAS experiment tracking device at the Large Hadron Collider, and plays a key role in the reconstruction of the primary vertices from the collisions and secondary vertices produced by short-lived particles. To cope with the high level of radiation produced during the collider operation, it is planned to add to the present three layers of silicon pixel sensors which constitute the Pixel Detector, an additional layer (Insertable B-Layer, or IBL) of sensors. 3D silicon sensors are one of the technologies which are under study for the IBL. 3D silicon technology is an innovative combination of very-large-scale integration and Micro-Electro-Mechanical-Systems where electrodes are fabricated inside the silicon bulk instead of being implanted on the wafer surfaces. 3D sensors, with electrodes fully or partially penetrating the silicon substrate, are currently fabricated at different processing facilities in Europe and USA. This paper reports on the 2010 June beam test results for irradiated 3D devices produced at FBK (Trento, Italy). The performance of these devices, all bump-bonded with the ATLAS pixel FE-I3 read-out chip, is compared to that observed before irradiation in a previous beam test.},
doi = {},
journal = {Nuclear Instruments and Methods in Physics Research, Section A},
issn = {0168-9002},
number = 1,
volume = 650,
place = {United States},
year = {2012},
month = {4}
}