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Title: Method for synthesis of high quality graphene

Abstract

A method is described herein for the providing of high quality graphene layers on silicon carbide wafers in a thermal process. With two wafers facing each other in close proximity, in a first vacuum heating stage, while maintained at a vacuum of around 10.sup.-6 Torr, the wafer temperature is raised to about 1500.degree. C., whereby silicon evaporates from the wafer leaving a carbon rich surface, the evaporated silicon trapped in the gap between the wafers, such that the higher vapor pressure of silicon above each of the wafers suppresses further silicon evaporation. As the temperature of the wafers is raised to about 1530.degree. C. or more, the carbon atoms self assemble themselves into graphene.

Inventors:
 [1];  [2];  [2];  [3];  [4];  [5]
  1. Piedmont, CA
  2. Berkeley, CA
  3. Albany, CA
  4. Beneditkbeuern, DE
  5. Oakland, CA
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1039209
Patent Number(s):
8,142,754
Application Number:
13/043,329
Assignee:
The Regents of the University of California (Oakland, CA)
DOE Contract Number:  
AC02-05CH11231
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Lanzara, Alessandra, Schmid, Andreas K, Yu, Xiaozhu, Hwang, Choonkyu, Kohl, Annemarie, and Jozwiak, Chris M. Method for synthesis of high quality graphene. United States: N. p., 2012. Web.
Lanzara, Alessandra, Schmid, Andreas K, Yu, Xiaozhu, Hwang, Choonkyu, Kohl, Annemarie, & Jozwiak, Chris M. Method for synthesis of high quality graphene. United States.
Lanzara, Alessandra, Schmid, Andreas K, Yu, Xiaozhu, Hwang, Choonkyu, Kohl, Annemarie, and Jozwiak, Chris M. Tue . "Method for synthesis of high quality graphene". United States. https://www.osti.gov/servlets/purl/1039209.
@article{osti_1039209,
title = {Method for synthesis of high quality graphene},
author = {Lanzara, Alessandra and Schmid, Andreas K and Yu, Xiaozhu and Hwang, Choonkyu and Kohl, Annemarie and Jozwiak, Chris M},
abstractNote = {A method is described herein for the providing of high quality graphene layers on silicon carbide wafers in a thermal process. With two wafers facing each other in close proximity, in a first vacuum heating stage, while maintained at a vacuum of around 10.sup.-6 Torr, the wafer temperature is raised to about 1500.degree. C., whereby silicon evaporates from the wafer leaving a carbon rich surface, the evaporated silicon trapped in the gap between the wafers, such that the higher vapor pressure of silicon above each of the wafers suppresses further silicon evaporation. As the temperature of the wafers is raised to about 1530.degree. C. or more, the carbon atoms self assemble themselves into graphene.},
doi = {},
url = {https://www.osti.gov/biblio/1039209}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2012},
month = {3}
}

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