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Title: Heteroepitaxial Film Silicon Solar Cell Grown on Ni-W Foils

Abstract

Heteroepitaxial semiconductor films on low-cost, flexible metal foil templates are a potential route to inexpensive, high-efficiency solar cells. Here, we report epitaxial growth of Si films on low-cost, flexible, biaxially-textured Ni-W substrates. A robust buffer architecture comprised of multiple epitaxial oxide layers has been developed to grow high quality, heteroepitaxial Si films without any undesired reaction between the Si film and the metal substrate and with a single biaxial texture. XRD analysis including {omega}-scans, {phi}-scans, and pole figures confirms that the buffers and silicon are all epitaxial, with excellent cube-on-cube epitaxy. A photo-conversion efficiency of 1.1% is demonstrated from a proof-of-concept heteroepitaxial film Si solar cell.

Authors:
; ; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy Solar Energy Technologies Program
OSTI Identifier:
1039096
Report Number(s):
NREL/JA-5200-54741
Journal ID: ISSN 1754-5692; TRN: US201209%%159
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Journal Article
Journal Name:
Energy & Environmental Science
Additional Journal Information:
Journal Volume: 5; Journal Issue: 3; Journal ID: ISSN 1754-5692
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; ARCHITECTURE; BUFFERS; EFFICIENCY; EPITAXY; OXIDES; SILICON; SILICON SOLAR CELLS; SOLAR CELLS; SUBSTRATES; TEXTURE; X-RAY DIFFRACTION; semiconductor films; solar cells; epitaxial growth

Citation Formats

Wee, S H, Cantoni, C, Fanning, T R, Teplin, C W, Bogorin, D F, Bornstein, J, Bowers, K, Schroeter, P, Hasoon, F, Branz, H M, Paranthaman, M P, and Goyal, A. Heteroepitaxial Film Silicon Solar Cell Grown on Ni-W Foils. United States: N. p., 2012. Web. doi:10.1039/c2ee03350j.
Wee, S H, Cantoni, C, Fanning, T R, Teplin, C W, Bogorin, D F, Bornstein, J, Bowers, K, Schroeter, P, Hasoon, F, Branz, H M, Paranthaman, M P, & Goyal, A. Heteroepitaxial Film Silicon Solar Cell Grown on Ni-W Foils. United States. https://doi.org/10.1039/c2ee03350j
Wee, S H, Cantoni, C, Fanning, T R, Teplin, C W, Bogorin, D F, Bornstein, J, Bowers, K, Schroeter, P, Hasoon, F, Branz, H M, Paranthaman, M P, and Goyal, A. Thu . "Heteroepitaxial Film Silicon Solar Cell Grown on Ni-W Foils". United States. https://doi.org/10.1039/c2ee03350j.
@article{osti_1039096,
title = {Heteroepitaxial Film Silicon Solar Cell Grown on Ni-W Foils},
author = {Wee, S H and Cantoni, C and Fanning, T R and Teplin, C W and Bogorin, D F and Bornstein, J and Bowers, K and Schroeter, P and Hasoon, F and Branz, H M and Paranthaman, M P and Goyal, A},
abstractNote = {Heteroepitaxial semiconductor films on low-cost, flexible metal foil templates are a potential route to inexpensive, high-efficiency solar cells. Here, we report epitaxial growth of Si films on low-cost, flexible, biaxially-textured Ni-W substrates. A robust buffer architecture comprised of multiple epitaxial oxide layers has been developed to grow high quality, heteroepitaxial Si films without any undesired reaction between the Si film and the metal substrate and with a single biaxial texture. XRD analysis including {omega}-scans, {phi}-scans, and pole figures confirms that the buffers and silicon are all epitaxial, with excellent cube-on-cube epitaxy. A photo-conversion efficiency of 1.1% is demonstrated from a proof-of-concept heteroepitaxial film Si solar cell.},
doi = {10.1039/c2ee03350j},
url = {https://www.osti.gov/biblio/1039096}, journal = {Energy & Environmental Science},
issn = {1754-5692},
number = 3,
volume = 5,
place = {United States},
year = {2012},
month = {3}
}

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