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Title: First-Principles Study of Impurities in TlBr

Abstract

TlBr is a promising semiconductor material for room-temperature radiation detection. Material purification has been the driver for the recent improvement in the TlBr detector performance, mainly reflected by the significant increase in the carrier mobility-lifetime product. This suggests that impurities have significant impact on the carrier transport in TlBr. In this paper, first-principles calculations are used to study the properties of a number of commonly observed impurities in TlBr. The impurity-induced gap states are presented and their effects on the carrier trapping are discussed.

Authors:
 [1]
  1. ORNL
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1038083
DOE Contract Number:  
DE-AC05-00OR22725
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 111; Journal Issue: 7; Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; IMPURITIES; PERFORMANCE; PURIFICATION; RADIATION DETECTION; SEMICONDUCTOR MATERIALS; TRANSPORT; TRAPPING

Citation Formats

Du, Mao-Hua. First-Principles Study of Impurities in TlBr. United States: N. p., 2012. Web. doi:10.1063/1.3702574.
Du, Mao-Hua. First-Principles Study of Impurities in TlBr. United States. https://doi.org/10.1063/1.3702574
Du, Mao-Hua. Sun . "First-Principles Study of Impurities in TlBr". United States. https://doi.org/10.1063/1.3702574.
@article{osti_1038083,
title = {First-Principles Study of Impurities in TlBr},
author = {Du, Mao-Hua},
abstractNote = {TlBr is a promising semiconductor material for room-temperature radiation detection. Material purification has been the driver for the recent improvement in the TlBr detector performance, mainly reflected by the significant increase in the carrier mobility-lifetime product. This suggests that impurities have significant impact on the carrier transport in TlBr. In this paper, first-principles calculations are used to study the properties of a number of commonly observed impurities in TlBr. The impurity-induced gap states are presented and their effects on the carrier trapping are discussed.},
doi = {10.1063/1.3702574},
url = {https://www.osti.gov/biblio/1038083}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 7,
volume = 111,
place = {United States},
year = {2012},
month = {1}
}