Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

Method of doping organic semiconductors

Patent ·
OSTI ID:1036112
 [1];  [2];  [3]
  1. Constance, DE
  2. Summit, NJ
  3. New Providence, NJ
+ Show Author Affiliations
A method includes the steps of forming a contiguous semiconducting region and heating the region. The semiconducting region includes polyaromatic molecules. The heating raises the semiconducting region to a temperature above room temperature. The heating is performed in the presence of a dopant gas and the absence of light to form a doped organic semiconducting region.
Research Organization:
The Trustees of Columbia University (New York, NY)
Sponsoring Organization:
USDOE
DOE Contract Number:
FG02-04ER46118
Assignee:
Alcatel Lucent (Paris, FR); The Trustees of Columbia University (New York, NY)
Patent Number(s):
8,124,444
Application Number:
12/875,902
OSTI ID:
1036112
Country of Publication:
United States
Language:
English

References (6)

Mobility-independent doping in crystalline rubrene field-effect transistors journal June 2007
Field-effect transistors on rubrene single crystals with parylene gate insulator journal March 2003
Light-induced switching in back-gated organic transistors with built-in conduction channel journal December 2004
Determination of the inertial contribution to the nonlinear refractive index of air, N_2, and O_2 by use of unfocused high-intensity femtosecond laser pulses journal January 1997
Humidity effect on electrical performance of organic thin-film transistors journal January 2005
The Effect of Oxygen on the Photoconductivity of Anthracene. II journal June 1954

Similar Records

Related Subjects

36 MATERIALS SCIENCE