Front and backside processed thin film electronic devices
Patent
·
OSTI ID:1035053
- Madison, WI
- Middleton, WI
- Lakewood, CO
This invention provides thin film devices that have been processed on their front- and backside. The devices include an active layer that is sufficiently thin to be mechanically flexible. Examples of the devices include back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.
- Research Organization:
- University of Wisconsin
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FG02-03ER46028
- Assignee:
- Wisconsin Alumni Research Foundation (Madison, WI)
- Patent Number(s):
- 8,089,073
- Application Number:
- US patent applicaiton 12/877,269
- OSTI ID:
- 1035053
- Country of Publication:
- United States
- Language:
- English
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