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Title: Wide Bandgap Extrinsic Photoconductive Switches

Abstract

Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the wide bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.

Authors:
 [1]
  1. State Univ. of New York (SUNY), Plattsburgh, NY (United States); Univ. of California, Davis, CA (United States)
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1034509
Report Number(s):
LLNL-TH-523591
TRN: US201204%%51
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Thesis/Dissertation
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRIC FIELDS; ELECTRODES; ELECTRONS; GALLIUM NITRIDES; MONOCRYSTALS; PHOTOCONDUCTIVITY; SATURATION; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES; SILICON CARBIDES; SUBSTRATES; SWITCHES; VELOCITY

Citation Formats

Sullivan, James S. Wide Bandgap Extrinsic Photoconductive Switches. United States: N. p., 2012. Web. doi:10.2172/1034509.
Sullivan, James S. Wide Bandgap Extrinsic Photoconductive Switches. United States. doi:10.2172/1034509.
Sullivan, James S. Fri . "Wide Bandgap Extrinsic Photoconductive Switches". United States. doi:10.2172/1034509. https://www.osti.gov/servlets/purl/1034509.
@article{osti_1034509,
title = {Wide Bandgap Extrinsic Photoconductive Switches},
author = {Sullivan, James S.},
abstractNote = {Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the wide bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.},
doi = {10.2172/1034509},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Jan 20 00:00:00 EST 2012},
month = {Fri Jan 20 00:00:00 EST 2012}
}

Thesis/Dissertation:
Other availability
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