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Title: Nanochannel-Directed Growth of One-Dimensional Multi-Segment Heterojunctions of Metallic Au1-xGex and Semiconducting Ge

Journal Article · · ACS Nano
DOI:https://doi.org/10.1021/nn2043466· OSTI ID:1034008

We report on the synthesis of multi-segment nanowire (NW) junctions of Au{sub 1-x}Ge{sub x} and Ge inside the nanochannels of porous anodic aluminum oxide template. The one-dimensional heterostructures are grown with a low-temperature chemical vapor deposition process, assisted by electrodeposited Au nanowires (AuNWs). The Au-catalyzed vapor-liquid-solid growth process occurs simultaneously in multiple locations along the nanochannel, which leads to multi-segment Au{sub 1-x}Ge{sub x}/Ge heterojunctions. The structures of the as-grown hybrid NWs, analyzed by using transmission electron microscopy and energy-dispersive X-ray spectroscopy elemental mapping, show clear compositional modulation with variable modulation period and controllable junction numbers. Remarkably, both GeNW and Au{sub 1-x}Ge{sub x}NW segments are single crystalline with abrupt interfaces and good crystallographic coherences. The electronic and transport properties of individual NW junctions are measured by using a multi-probe scanning tunneling microscope, which confirms the semiconducting nature of Ge segments and the metallic behavior of Au{sub 1-x}Ge{sub x} segments, respectively. The high yield of multiple segment NW junctions of a metal-semiconductor can facilitate the applications in nanoelectronics and optoelectronics that harness multiple functionalities of heterointerfaces.

Research Organization:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Organization:
USDOE Office of Science (SC)
DOE Contract Number:
DE-AC05-00OR22725
OSTI ID:
1034008
Journal Information:
ACS Nano, Vol. 6, Issue 1; ISSN 1936-0851
Country of Publication:
United States
Language:
English