Silicon release coating, method of making same, and method of using same
Abstract
A method of making a release coating includes the following steps: forming a mixture that includes (a) solid components comprising (i) 20-99% silicon by weight and (ii) 1-80% silicon nitride by weight and (b) a solvent; applying the mixture to an inner portion of a crucible or graphite board adapted to form an ingot or wafer comprising silicon; and annealing the mixture in a nitrogen atmosphere at a temperature ranging from 1000 to 2000.degree. C. The invention may also relate to release coatings and methods of making a silicon ingot or wafer including the use of a release coating.
- Inventors:
-
- Wilmington, DE
- Publication Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1032965
- Patent Number(s):
- 8,062,704
- Application Number:
- 11/832,871
- Assignee:
- Motech Americas, LLC (Newark, DE)
- DOE Contract Number:
- AC36-99GO10337
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Jonczyk, Ralf. Silicon release coating, method of making same, and method of using same. United States: N. p., 2011.
Web.
Jonczyk, Ralf. Silicon release coating, method of making same, and method of using same. United States.
Jonczyk, Ralf. 2011.
"Silicon release coating, method of making same, and method of using same". United States. https://www.osti.gov/servlets/purl/1032965.
@article{osti_1032965,
title = {Silicon release coating, method of making same, and method of using same},
author = {Jonczyk, Ralf},
abstractNote = {A method of making a release coating includes the following steps: forming a mixture that includes (a) solid components comprising (i) 20-99% silicon by weight and (ii) 1-80% silicon nitride by weight and (b) a solvent; applying the mixture to an inner portion of a crucible or graphite board adapted to form an ingot or wafer comprising silicon; and annealing the mixture in a nitrogen atmosphere at a temperature ranging from 1000 to 2000.degree. C. The invention may also relate to release coatings and methods of making a silicon ingot or wafer including the use of a release coating.},
doi = {},
url = {https://www.osti.gov/biblio/1032965},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 22 00:00:00 EST 2011},
month = {Tue Nov 22 00:00:00 EST 2011}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Nitride-bonded silicon nitride from slip-cast Si + Si 3 N 4 compacts
journal, February 2002
- Rao, R. Ramachandra; Kannan, T. S.
- Journal of Materials Research, Vol. 17, Issue 2