skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Silicon release coating, method of making same, and method of using same

Abstract

A method of making a release coating includes the following steps: forming a mixture that includes (a) solid components comprising (i) 20-99% silicon by weight and (ii) 1-80% silicon nitride by weight and (b) a solvent; applying the mixture to an inner portion of a crucible or graphite board adapted to form an ingot or wafer comprising silicon; and annealing the mixture in a nitrogen atmosphere at a temperature ranging from 1000 to 2000.degree. C. The invention may also relate to release coatings and methods of making a silicon ingot or wafer including the use of a release coating.

Inventors:
 [1]
  1. Wilmington, DE
Publication Date:
Research Org.:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1032965
Patent Number(s):
8,062,704
Application Number:
11/832,871
Assignee:
Motech Americas, LLC (Newark, DE)
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Jonczyk, Ralf. Silicon release coating, method of making same, and method of using same. United States: N. p., 2011. Web.
Jonczyk, Ralf. Silicon release coating, method of making same, and method of using same. United States.
Jonczyk, Ralf. 2011. "Silicon release coating, method of making same, and method of using same". United States. https://www.osti.gov/servlets/purl/1032965.
@article{osti_1032965,
title = {Silicon release coating, method of making same, and method of using same},
author = {Jonczyk, Ralf},
abstractNote = {A method of making a release coating includes the following steps: forming a mixture that includes (a) solid components comprising (i) 20-99% silicon by weight and (ii) 1-80% silicon nitride by weight and (b) a solvent; applying the mixture to an inner portion of a crucible or graphite board adapted to form an ingot or wafer comprising silicon; and annealing the mixture in a nitrogen atmosphere at a temperature ranging from 1000 to 2000.degree. C. The invention may also relate to release coatings and methods of making a silicon ingot or wafer including the use of a release coating.},
doi = {},
url = {https://www.osti.gov/biblio/1032965}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 22 00:00:00 EST 2011},
month = {Tue Nov 22 00:00:00 EST 2011}
}

Works referenced in this record:

Nitride-bonded silicon nitride from slip-cast Si + Si 3 N 4 compacts
journal, February 2002