Electric control of magnetization relaxation in thin film ferromagnetic insulators.

Journal Article · Sat Jan 01 00:00:00 EST 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3654148· OSTI ID:1030909

Wang, Z; Sun, Y; Song, Y-Y; Wu, M; Schultheib, H; Pearson, J E; Hoffmann, A ^[1]

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1. Materials Science Division

Control of magnetization relaxation in magnetic insulators via interfacial spin scattering is demonstrated. The experiments use nanometer-thick yttrium iron garnet (YIG)/Pt layered structures, with the Pt layer biased by an electric voltage. The bias voltage produces a spin current across the Pt thickness. As this current scatters off the YIG surface, it exerts a torque on the YIG surface spins. This torque can reduce or enhance the damping and thereby decrease or increase the ferromagnetic resonance linewidth of the YIG film, depending on the field/current configuration.

• Research Organization: Argonne National Lab. (ANL), Argonne, IL (United States)
• Sponsoring Organization: USDOE Office of Science (SC); National Science Foundation (NSF); National Institute of Standards and Technology (NIST)
• DOE Contract Number: DE-AC02-06CH11357
• OSTI ID: 1030909
• Report Number(s): ANL/MSD/JA-71499; APPLAB; TRN: US201124%%534
• Journal Information: Applied Physics Letters, Vol. 99, Issue 16; ISSN 0003-6951
• Country of Publication: United States
• Language: ENGLISH

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CONFIGURATION
DAMPING
FERRITE GARNETS
FERROMAGNETIC RESONANCE
MAGNETIZATION
RELAXATION
SCATTERING
SPIN
THICKNESS
THIN FILMS
TORQUE
YTTRIUM