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Title: Beam test measurements with planar and 3D silicon strip detectors irradiated to sLHC fluences

Abstract

The planned luminosity upgrade of the CERN LHC to the super LHC (sLHC) requires investigation of new radiation hard tracking detectors. Compared to the LHC, tracking detectors must withstand a 5-10 times higher radiation fluence. Promising radiation hard options are planar silicon detectors with n-side readout and silicon detectors in 3D technology, where columnar electrodes are etched into the silicon substrate. This article presents beam test measurements per formed with planar and 3D n-in-p silicon strip detectors. The detectors were irradiated to different fluences, where the maximum fluence was 3 x 10{sup 15} 1 MeV neutron equivalent particles per square centimeter (n{sub eq}/cm{sup 2}) for the planar detectors and 2 x 10{sup 15} n{sub eq}/cm{sup 2} for the 3D detectors. In addition to signal measurements, charge sharing and resolution of both detector technologies are compared. An increased signal from the irradiated 3D detectors at high bias voltages compared to the signal from the unirradiated detector indicates that charge multiplication effects occur in the 3D detectors. At a bias voltage of 260 V, the 3D detector irradiated to 2 x 10{sup 15} n{sub eq}/cm{sup 2} yields a signal almost twice as high as the signal of the unirradiated detector. Only 30%more » of the signal of an unirradiated detector could be measured with the planar detector irradiated to 3 x 10{sup 15} n{sub eq}/cm{sup 2} at a bias voltage of 600 V, which was the highest bias voltage applied to this sensor.« less

Authors:
; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1029653
Report Number(s):
FERMILAB-PUB-11-401-PPD
Journal ID: ISSN 0018-9499; IETNAE; TRN: US1105828
DOE Contract Number:  
AC02-07CH11359
Resource Type:
Journal Article
Journal Name:
IEEE Transactions on Nuclear Science
Additional Journal Information:
Journal Volume: 58; Journal Issue: 3; Journal ID: ISSN 0018-9499
Country of Publication:
United States
Language:
English
Subject:
43 PARTICLE ACCELERATORS; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; CERN LHC; ELECTRODES; LUMINOSITY; NEUTRONS; RADIATIONS; RESOLUTION; SILICON; Instrumentation

Citation Formats

Kohler, Michael, Wiik, Liv, /Freiburg U., Bates, Richard, /Glasgow U., Dalla Betta, Gian-Franco, /INFN, Trento /Trento U., Fleta, Celeste, /Barcelona, Inst. Microelectron., Harkonen, Jaakko, /Helsinki Inst. of Phys., Jakobs, Karl, /Freiburg U., Lozano, Manuel, /Barcelona, Inst. Microelectron., Maenpaa, Teppo, Moilanen, Henri, /Helsinki Inst. of Phys., Parkes, Chris, and /Glasgow U. /Freiburg U. /Barcelona, Inst. Microelectron. /Fermilab. Beam test measurements with planar and 3D silicon strip detectors irradiated to sLHC fluences. United States: N. p., 2011. Web. doi:10.1109/TNS.2011.2126598.
Kohler, Michael, Wiik, Liv, /Freiburg U., Bates, Richard, /Glasgow U., Dalla Betta, Gian-Franco, /INFN, Trento /Trento U., Fleta, Celeste, /Barcelona, Inst. Microelectron., Harkonen, Jaakko, /Helsinki Inst. of Phys., Jakobs, Karl, /Freiburg U., Lozano, Manuel, /Barcelona, Inst. Microelectron., Maenpaa, Teppo, Moilanen, Henri, /Helsinki Inst. of Phys., Parkes, Chris, & /Glasgow U. /Freiburg U. /Barcelona, Inst. Microelectron. /Fermilab. Beam test measurements with planar and 3D silicon strip detectors irradiated to sLHC fluences. United States. doi:10.1109/TNS.2011.2126598.
Kohler, Michael, Wiik, Liv, /Freiburg U., Bates, Richard, /Glasgow U., Dalla Betta, Gian-Franco, /INFN, Trento /Trento U., Fleta, Celeste, /Barcelona, Inst. Microelectron., Harkonen, Jaakko, /Helsinki Inst. of Phys., Jakobs, Karl, /Freiburg U., Lozano, Manuel, /Barcelona, Inst. Microelectron., Maenpaa, Teppo, Moilanen, Henri, /Helsinki Inst. of Phys., Parkes, Chris, and /Glasgow U. /Freiburg U. /Barcelona, Inst. Microelectron. /Fermilab. Sat . "Beam test measurements with planar and 3D silicon strip detectors irradiated to sLHC fluences". United States. doi:10.1109/TNS.2011.2126598.
@article{osti_1029653,
title = {Beam test measurements with planar and 3D silicon strip detectors irradiated to sLHC fluences},
author = {Kohler, Michael and Wiik, Liv and /Freiburg U. and Bates, Richard and /Glasgow U. and Dalla Betta, Gian-Franco and /INFN, Trento /Trento U. and Fleta, Celeste and /Barcelona, Inst. Microelectron. and Harkonen, Jaakko and /Helsinki Inst. of Phys. and Jakobs, Karl and /Freiburg U. and Lozano, Manuel and /Barcelona, Inst. Microelectron. and Maenpaa, Teppo and Moilanen, Henri and /Helsinki Inst. of Phys. and Parkes, Chris and /Glasgow U. /Freiburg U. /Barcelona, Inst. Microelectron. /Fermilab},
abstractNote = {The planned luminosity upgrade of the CERN LHC to the super LHC (sLHC) requires investigation of new radiation hard tracking detectors. Compared to the LHC, tracking detectors must withstand a 5-10 times higher radiation fluence. Promising radiation hard options are planar silicon detectors with n-side readout and silicon detectors in 3D technology, where columnar electrodes are etched into the silicon substrate. This article presents beam test measurements per formed with planar and 3D n-in-p silicon strip detectors. The detectors were irradiated to different fluences, where the maximum fluence was 3 x 10{sup 15} 1 MeV neutron equivalent particles per square centimeter (n{sub eq}/cm{sup 2}) for the planar detectors and 2 x 10{sup 15} n{sub eq}/cm{sup 2} for the 3D detectors. In addition to signal measurements, charge sharing and resolution of both detector technologies are compared. An increased signal from the irradiated 3D detectors at high bias voltages compared to the signal from the unirradiated detector indicates that charge multiplication effects occur in the 3D detectors. At a bias voltage of 260 V, the 3D detector irradiated to 2 x 10{sup 15} n{sub eq}/cm{sup 2} yields a signal almost twice as high as the signal of the unirradiated detector. Only 30% of the signal of an unirradiated detector could be measured with the planar detector irradiated to 3 x 10{sup 15} n{sub eq}/cm{sup 2} at a bias voltage of 600 V, which was the highest bias voltage applied to this sensor.},
doi = {10.1109/TNS.2011.2126598},
journal = {IEEE Transactions on Nuclear Science},
issn = {0018-9499},
number = 3,
volume = 58,
place = {United States},
year = {2011},
month = {1}
}