Nano-soldering to single atomic layer

Title: Nano-soldering to single atomic layer

Full Record
Other Related Research

Abstract

A simple technique to solder submicron sized, ohmic contacts to nanostructures has been disclosed. The technique has several advantages over standard electron beam lithography methods, which are complex, costly, and can contaminate samples. To demonstrate the soldering technique graphene, a single atomic layer of carbon, has been contacted, and low- and high-field electronic transport properties have been measured.

Inventors:

Girit, Caglar O ^[1]; Zettl, Alexander K ^[2]

Berkeley, CA
Kensington, CA

Publication Date:: 2011-10-11

Research Org.:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1029265

Patent Number(s):: 8,033,445

Application Number:: 12/270,643

Assignee:: The Regents of the University of California (Oakland, CA)

DOE Contract Number:: AC02-05CH11231

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Girit, Caglar O, and Zettl, Alexander K. Nano-soldering to single atomic layer.  United States: N. p., 2011. 
        Web.

Copy to clipboard


                    Girit, Caglar O, & Zettl, Alexander K. Nano-soldering to single atomic layer.  United States.

Copy to clipboard


                    Girit, Caglar O, and Zettl, Alexander K. Tue .  
        "Nano-soldering to single atomic layer".  United States.  https://www.osti.gov/servlets/purl/1029265.

Copy to clipboard


                    
@article{osti_1029265,

  title        = {Nano-soldering to single atomic layer},

  author       = {Girit, Caglar O and Zettl, Alexander K},

  abstractNote = {A simple technique to solder submicron sized, ohmic contacts to nanostructures has been disclosed. The technique has several advantages over standard electron beam lithography methods, which are complex, costly, and can contaminate samples. To demonstrate the soldering technique graphene, a single atomic layer of carbon, has been contacted, and low- and high-field electronic transport properties have been measured.},

  doi          = {},

  url          = {https://www.osti.gov/biblio/1029265},
  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2011},

  month        = {10}

}

Copy to clipboard

Patent:

View Patent

Save / Share:

Export Metadata

Save to My Library

Similar records in OSTI.GOV collections:

Probing electronic transport of individual nanostructures with atomic precision

Book Qin, Shengyong ; Li, An-Ping

Accessing individual nanostructures with atomic precision is an important process in the bottom-up fabrication and characterization of electronic nanodevices. Local electrical contacts, namely nanoelectrodes, are often fabricated by using top-down lithography and chemical etching techniques. These processes however lack atomic precision and introduce the possibility of contamination. Here, we review recent reports on the application of a field-induced emission process in the fabrication of local contacts onto individual nanowires and nanotubes with atomic spatial precision. In this method, gold nanoislands are deposited onto nanostructures precisely by using a scanning tunneling microscope tip, which provides a clean and controllable process tomore »« less
Si and SiGe based double top gated accumulation mode single electron transistors for quantum bits.

Conference Wendt, Joel Robert ; Ten Eyck, Gregory A ; Childs, Kenton David ; ...

There is significant interest in forming quantum bits (qubits) out of single electron devices for quantum information processing (QIP). Information can be encoded using properties like charge or spin. Spin is appealing because it is less strongly coupled to the solid-state environment so it is believed that the quantum state can better be preserved over longer times (i.e., that is longer decoherence times may be achieved). Long spin decoherence times would allow more complex qubit operations to be completed with higher accuracy. Recently spin qubits were demonstrated by several groups using electrostatically gated modulation doped GaAs double quantum dots (DQD)more »« less
Contacting nanowires and nanotubes with atomic precision for electronic transport

Journal Article Qin, Shengyong ; Hellstrom, Sondra L ; Bao, Zhenan ; ... - Applied Physics Letters

Making contacts to nanostructures with atomic precision is an important process in the bottom-up fabrication and characterization of electronic nanodevices. Existing contacting techniques use top-down lithography and chemical etching, but lack atomic precision and introduce the possibility of contamination. Here, we report that a field-induced emission process can be used to make local contacts onto individual nanowires and nanotubes with atomic spatial precision. The gold nano-islands are deposited onto nanostructures precisely by using a scanning tunneling microscope tip, which provides a clean and controllable method to ensure both electrically conductive and mechanically reliable contacts. To demonstrate the wide applicability ofmore »« less
https://doi.org/10.1063/1.3692585
Composition of low-strength solder joints in solar-concentrator-cell arrays

Conference Chamberlain, M B ; Nordstrom, T V

Bond strengths of Cu strips soldered to the backside metallization of solar concentrator cells were found to be unacceptably low. To determine whether contaminants in the cell metallization caused these low strengths, unsoldered cells and soldered cells were characterized by scanning Auger microscopy. The backside metallization consisted of a 5 ..mu..m Ag conductor layer, a 150 nm Pd diffusion barrier and a 150 nm Ti adhesion layer next to an Al ohmic contact layer on the Si cell. The analysis showed that the Ti layer had been partially oxidized during soldering, that Pb from the Pb-5 wt % Sn -more »« less
Printed Nano Cu and NiSi Contacts and Metallization for Solar Cell Modules

Technical Report Carmody, Michael John

There has long been a desire to replace the front-side silver contacts in silicon solar cells. There are two driving forces to do this. First, silver is an expensive precious metal. Secondly, the process to use silver requires that it be formulated into screen print pastes that need a lead-containing glass frit, and the use of lead is forbidden in many parts of the world. Because of the difficulty in replacing these pastes and the attendant processes, lead exemptions have granted to solar cells. Copper has been the replacement metal of choice because it is significantly cheaper than silver andmore »« less
https://doi.org/10.2172/1398964

Full Text Available

Similar Records