Effect of Sub-Bandgap Illumination on the Internal Electric Field of CdZnTe

Journal Article · Fri Sep 16 00:00:00 EDT 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3638443· OSTI ID:1029114

Washington, A

Post-growth manipulation of the internal electric field in CdZnTe crystals using sub-bandgap illumination is measured as a function of temperature through infrared (IR) transmission measurements. Using near sub-bandgap IR illumination, both the optical de-trapping of charge carriers and the reduction in carrier recombination increased the mobility lifetime in the crystal. The increased carrier transport is a direct result of decreased hole and electron trapping in addition to other underlying mechanisms. Concentration of the electric field near the cathode is also observed. We measured the electric field distribution with sub-bandgap illumination as a function of temperature via the Pockels effect.

• Research Organization: Savannah River Site (SRS), Aiken, SC (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: DE-AC09-08SR22470
• OSTI ID: 1029114
• Report Number(s): SRNL-STI-2011-00565; JAPIAU; TRN: US201123%%17
• Journal Information: Journal of Applied Physics, Vol. 110, Issue 7; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CADMIUM TELLURIDES
CATHODES
CHARGE CARRIERS
DISTRIBUTION
ELECTRIC FIELDS
ILLUMINANCE
LIFETIME
RECOMBINATION
TRANSPORT
TRAPPED ELECTRONS
TRAPPING
ZINC TELLURIDES