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Title: STM and AFM of CVD-diamond and diamond-like carbon thin films

Abstract

Insulating polycrystalline diamond films grown by chemical vapor deposition (CVD) are semiconducting diamond-like carbon (DLC) films grown by laser-ablation have been studied using STM and AFM as well as other complementary techniques. Issues relating to the STM technique as well as the materials properties of these films have been explored. In a novel approach, photo-induced bulk carrier transport using a xenon arc lamp providing broadband radiation ({lambda} = 180--700 nm) was used successfully to establish bulk conduction for STM imaging of the insulating films. Comparisons of topographic STM images with AFM images acquired on the same samples demonstrated the ability to correlate sub-micrometer structures observed in the images. This capability opens up the possibility that local electronic surface structure can be measured with STS. Preliminary tunneling spectra acquired on semiconducting DLC films demonstrated that illumination promotes the occupation of new electronic states resulting in a reduction of the observed energy gap at the surface. Images of DLC samples grown under a variety of conditions are providing new information into the preparation and growth parameters required to obtain the best quality films and their integrity after thermal cycling and other post-fabrication treatments.

Authors:
 [1]; ; ;  [2]; ;  [3];  [1]
  1. Drexel Univ., Philadelphia, PA (United States). Dept. of Physics and Atmospheric Science
  2. Pennsylvania Univ., Philadelphia, PA (United States). Dept. of Materials Science and Engineering
  3. Sandia National Labs., Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
102490
Report Number(s):
SAND-94-1486C; CONF-9406268-2
ON: DE95015437
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Atomic force scanning tunneling microscopy symposium, Natick, MA (United States), 7-9 Jun 1994; Other Information: PBD: [1994]
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARBON; MICROSCOPY; CHEMICAL VAPOR DEPOSITION; SURFACE PROPERTIES; IMAGES; SCANNING LIGHT MICROSCOPY; TUNNEL EFFECT; ELECTRONIC STRUCTURE

Citation Formats

Mercer, T W, Carroll, D L, Liang, Yong, Bonnell, D, Friedmann, T A, Siegal, M P, DiNardo, N J, and Pennsylvania Univ., Philadelphia, PA. STM and AFM of CVD-diamond and diamond-like carbon thin films. United States: N. p., 1994. Web.
Mercer, T W, Carroll, D L, Liang, Yong, Bonnell, D, Friedmann, T A, Siegal, M P, DiNardo, N J, & Pennsylvania Univ., Philadelphia, PA. STM and AFM of CVD-diamond and diamond-like carbon thin films. United States.
Mercer, T W, Carroll, D L, Liang, Yong, Bonnell, D, Friedmann, T A, Siegal, M P, DiNardo, N J, and Pennsylvania Univ., Philadelphia, PA. Sat . "STM and AFM of CVD-diamond and diamond-like carbon thin films". United States. https://www.osti.gov/servlets/purl/102490.
@article{osti_102490,
title = {STM and AFM of CVD-diamond and diamond-like carbon thin films},
author = {Mercer, T W and Carroll, D L and Liang, Yong and Bonnell, D and Friedmann, T A and Siegal, M P and DiNardo, N J and Pennsylvania Univ., Philadelphia, PA},
abstractNote = {Insulating polycrystalline diamond films grown by chemical vapor deposition (CVD) are semiconducting diamond-like carbon (DLC) films grown by laser-ablation have been studied using STM and AFM as well as other complementary techniques. Issues relating to the STM technique as well as the materials properties of these films have been explored. In a novel approach, photo-induced bulk carrier transport using a xenon arc lamp providing broadband radiation ({lambda} = 180--700 nm) was used successfully to establish bulk conduction for STM imaging of the insulating films. Comparisons of topographic STM images with AFM images acquired on the same samples demonstrated the ability to correlate sub-micrometer structures observed in the images. This capability opens up the possibility that local electronic surface structure can be measured with STS. Preliminary tunneling spectra acquired on semiconducting DLC films demonstrated that illumination promotes the occupation of new electronic states resulting in a reduction of the observed energy gap at the surface. Images of DLC samples grown under a variety of conditions are providing new information into the preparation and growth parameters required to obtain the best quality films and their integrity after thermal cycling and other post-fabrication treatments.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {12}
}

Conference:
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