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Title: Diluted magnetic semiconductor nanowires exhibiting magnetoresistance

Abstract

A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

Inventors:
 [1];  [2];  [3];  [4];  [1];  [5];  [5]
  1. El Cerrito, CA
  2. Seoul, KR
  3. Daejeon, KR
  4. Albany, CA
  5. Berkeley, CA
Publication Date:
Research Org.:
University of California (Oakland, CA)
Sponsoring Org.:
USDOE
OSTI Identifier:
1024109
Patent Number(s):
8,003,497
Application Number:
11/480,280
Assignee:
The Regents of the University of California (Oakland, CA) OAK
DOE Contract Number:  
FG03-02ER46021
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE

Citation Formats

Yang, Peidong, Choi, Heonjin, Lee, Sangkwon, He, Rongrui, Zhang, Yanfeng, Kuykendal, Tevye, and Pauzauskie, Peter. Diluted magnetic semiconductor nanowires exhibiting magnetoresistance. United States: N. p., 2011. Web.
Yang, Peidong, Choi, Heonjin, Lee, Sangkwon, He, Rongrui, Zhang, Yanfeng, Kuykendal, Tevye, & Pauzauskie, Peter. Diluted magnetic semiconductor nanowires exhibiting magnetoresistance. United States.
Yang, Peidong, Choi, Heonjin, Lee, Sangkwon, He, Rongrui, Zhang, Yanfeng, Kuykendal, Tevye, and Pauzauskie, Peter. Tue . "Diluted magnetic semiconductor nanowires exhibiting magnetoresistance". United States. https://www.osti.gov/servlets/purl/1024109.
@article{osti_1024109,
title = {Diluted magnetic semiconductor nanowires exhibiting magnetoresistance},
author = {Yang, Peidong and Choi, Heonjin and Lee, Sangkwon and He, Rongrui and Zhang, Yanfeng and Kuykendal, Tevye and Pauzauskie, Peter},
abstractNote = {A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2011},
month = {8}
}

Patent:

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