Double quantum dot with tunable coupling in a Si MOS device with lateral geometry.
- University of Oklahoma, Norman, OK
- University of Wisconsin-Madison, Madison, WI
We report low-temperature transport measurements of a silicon metal-oxide-semiconductor (MOS) double quantum dot (DQD). In contrast to previously reported measurements of DQD's in Si MOS structures, our device has a lateral gate geometry very similar to that used by Petta et al. to demonstrate coherent manipulation of single electron spins. This gate design provides a high degree of tunability, allowing for independent control over individual dot occupation and tunnel barriers, as well as the ability to use nearby constrictions to sense dot charge occupation. Comparison of experimentally extracted capacitances between the dot and nearby gates with electrostatic modeling demonstrates the presence of disorder and the ability to partially compensate for this disorder by adjustment of gate voltages. We experimentally show gate-controlled tuning of the interdot coupling over a wide range of energies, an important step towards potential quantum computing applications.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1023003
- Report Number(s):
- SAND2010-5556C; TRN: US201118%%675
- Resource Relation:
- Conference: Proposed for presentation at the Silicon S&T Quantum Computing Fourth Annual Workshop held August 23-24, 2010 in Albuquerque, NM.
- Country of Publication:
- United States
- Language:
- English
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