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Title: Research on silicon-carbon alloys and interfaces. Final subcontract report, 15 February 1991--31 July 1994

Abstract

This report describes work performed to develop improved p-type wide-band-gap hydrogenated amorphous silicon-carbon alloy (a-Si{sub 1-x}C{sub x:}H) thin films and interfaces for the ``top junction`` in hydrogenated amorphous silicon (a-Si:H)-based p-i-n solar cells. We used direct current reactive magnetron sputtering to deposit undoped a-Si{sub 1-x}C{sub x}H films with a Tauc band gap E{sub g} of 1.90 eV, a sub-band-gap absorption of 0.4 (at 1.2 eV), an Urbach energy of 55 MeV, an ambipolar diffusion length of 100 nm, an air-mass-one photoconductivity of 10{sup {minus}6}/{Omega}-cm, and a dark conductivity of 8{times} 1O{sup {minus}11}/{Omega}-cm. p{sup +}a-Si{sub 1-x}C{sub x}:H films with a Tauc band gap of 1.85 eV have a dark conductivity of 8 {times} 10{sup {minus}6}/{Omega}-cm and thermal activation energy of 0.28 eV. We used in-situ spectroscopic ellipsometry and post-growth X-ray photoelectron spectroscopy to determine the relative roles of H and Si in the chemical reduction of SnO{sub 2} in the early stages of film growth. We used in-situ spectroscopic ellipsometry to show that a-Si:H can be transformed into {mu}c-Si:H in a subsurface region under appropriate growth conditions. We also determined substrate cleaning and ion bombardment conditions which improve the adhesion of a-Si{sub 1-x}C{sub x}:H films.

Authors:
 [1]
  1. Illinois Univ., Urbana, IL (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab., Golden, CO (United States); Illinois Univ., Urbana, IL (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
102293
Report Number(s):
NREL/TP-411-8111
ON: DE95009243
DOE Contract Number:
AC36-83CH10093
Resource Type:
Technical Report
Resource Relation:
Other Information: PBD: Jul 1995
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; SILICON SOLAR CELLS; MATERIALS; SILICON ALLOYS; CARBON ADDITIONS; PROGRESS REPORT

Citation Formats

Abelson, J.R.. Research on silicon-carbon alloys and interfaces. Final subcontract report, 15 February 1991--31 July 1994. United States: N. p., 1995. Web. doi:10.2172/102293.
Abelson, J.R.. Research on silicon-carbon alloys and interfaces. Final subcontract report, 15 February 1991--31 July 1994. United States. doi:10.2172/102293.
Abelson, J.R.. Sat . "Research on silicon-carbon alloys and interfaces. Final subcontract report, 15 February 1991--31 July 1994". United States. doi:10.2172/102293. https://www.osti.gov/servlets/purl/102293.
@article{osti_102293,
title = {Research on silicon-carbon alloys and interfaces. Final subcontract report, 15 February 1991--31 July 1994},
author = {Abelson, J.R.},
abstractNote = {This report describes work performed to develop improved p-type wide-band-gap hydrogenated amorphous silicon-carbon alloy (a-Si{sub 1-x}C{sub x:}H) thin films and interfaces for the ``top junction`` in hydrogenated amorphous silicon (a-Si:H)-based p-i-n solar cells. We used direct current reactive magnetron sputtering to deposit undoped a-Si{sub 1-x}C{sub x}H films with a Tauc band gap E{sub g} of 1.90 eV, a sub-band-gap absorption of 0.4 (at 1.2 eV), an Urbach energy of 55 MeV, an ambipolar diffusion length of 100 nm, an air-mass-one photoconductivity of 10{sup {minus}6}/{Omega}-cm, and a dark conductivity of 8{times} 1O{sup {minus}11}/{Omega}-cm. p{sup +}a-Si{sub 1-x}C{sub x}:H films with a Tauc band gap of 1.85 eV have a dark conductivity of 8 {times} 10{sup {minus}6}/{Omega}-cm and thermal activation energy of 0.28 eV. We used in-situ spectroscopic ellipsometry and post-growth X-ray photoelectron spectroscopy to determine the relative roles of H and Si in the chemical reduction of SnO{sub 2} in the early stages of film growth. We used in-situ spectroscopic ellipsometry to show that a-Si:H can be transformed into {mu}c-Si:H in a subsurface region under appropriate growth conditions. We also determined substrate cleaning and ion bombardment conditions which improve the adhesion of a-Si{sub 1-x}C{sub x}:H films.},
doi = {10.2172/102293},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Jul 01 00:00:00 EDT 1995},
month = {Sat Jul 01 00:00:00 EDT 1995}
}

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