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Title: The formation of Al{sub 2}O{sub 3}/V{sub 2}O{sub 3} multilayer structures by high-dose ion implantation

Abstract

High-resolution TEM, RBS-channeling and x-ray-diffraction techniques have been used to characterize multilayered structures formed by the high-dose co-implantation of vanadium and oxygen into single crystals of {alpha}-Al{sub 2}O{sub 3}. Thin, two-dimensional multilayered structures have been formed by implanting c-axis and a-axis-oriented single crystals of Al{sub 2}O{sub 3} at room temperature with vanadium (10{sup 17} ions/cm{sup 2} at 300 keV) and oxygen (2 x 10{sup 17} ions/cm{sup 2}, 120 keV) followed by a rapid anneal at 1,000 C. Cross-sectional TEM studies showed that this process produced a buried layer of V{sub 2}O{sub 3} located about 120 nm below the Al{sub 2}O{sub 3} surface. X-ray-diffraction investigations revealed that this layer is epitaxially oriented in three dimensions with respect to the host Al{sub 2}O{sub 3} lattice. The orientational relationship was subsequently confirmed by RBS/channeling techniques. V{sub 2}O{sub 3} exhibits a first-order phase transition at about 155 K that is accompanied by striking changes in its electrical and optical properties, and this phase transition was observed through in-situ TEM cooling studies of cross-sectional samples.

Authors:
; ;  [1];  [2]
  1. Oak Ridge National Lab., TN (United States). Solid State Div.
  2. Brown Univ., Providence, RI (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab., TN (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
102253
Report Number(s):
CONF-950412-48
ON: DE95017438; TRN: 95:020517
DOE Contract Number:  
AC05-84OR21400
Resource Type:
Technical Report
Resource Relation:
Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 17-21 Apr 1995; Other Information: PBD: Apr 1995
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; ION IMPLANTATION; FABRICATION; MICROSTRUCTURE; COMPOSITE MATERIALS; VANADIUM OXIDES; TRANSMISSION ELECTRON MICROSCOPY; RUTHERFORD SCATTERING; LAYERS; VANADIUM IONS; OXYGEN IONS; CRYSTAL-PHASE TRANSFORMATIONS; EXPERIMENTAL DATA; PRECIPITATION; LATTICE PARAMETERS

Citation Formats

Gea, L.A., Boatner, L.A., Budai, J.D., and Rankin, J.. The formation of Al{sub 2}O{sub 3}/V{sub 2}O{sub 3} multilayer structures by high-dose ion implantation. United States: N. p., 1995. Web. doi:10.2172/102253.
Gea, L.A., Boatner, L.A., Budai, J.D., & Rankin, J.. The formation of Al{sub 2}O{sub 3}/V{sub 2}O{sub 3} multilayer structures by high-dose ion implantation. United States. doi:10.2172/102253.
Gea, L.A., Boatner, L.A., Budai, J.D., and Rankin, J.. Sat . "The formation of Al{sub 2}O{sub 3}/V{sub 2}O{sub 3} multilayer structures by high-dose ion implantation". United States. doi:10.2172/102253. https://www.osti.gov/servlets/purl/102253.
@article{osti_102253,
title = {The formation of Al{sub 2}O{sub 3}/V{sub 2}O{sub 3} multilayer structures by high-dose ion implantation},
author = {Gea, L.A. and Boatner, L.A. and Budai, J.D. and Rankin, J.},
abstractNote = {High-resolution TEM, RBS-channeling and x-ray-diffraction techniques have been used to characterize multilayered structures formed by the high-dose co-implantation of vanadium and oxygen into single crystals of {alpha}-Al{sub 2}O{sub 3}. Thin, two-dimensional multilayered structures have been formed by implanting c-axis and a-axis-oriented single crystals of Al{sub 2}O{sub 3} at room temperature with vanadium (10{sup 17} ions/cm{sup 2} at 300 keV) and oxygen (2 x 10{sup 17} ions/cm{sup 2}, 120 keV) followed by a rapid anneal at 1,000 C. Cross-sectional TEM studies showed that this process produced a buried layer of V{sub 2}O{sub 3} located about 120 nm below the Al{sub 2}O{sub 3} surface. X-ray-diffraction investigations revealed that this layer is epitaxially oriented in three dimensions with respect to the host Al{sub 2}O{sub 3} lattice. The orientational relationship was subsequently confirmed by RBS/channeling techniques. V{sub 2}O{sub 3} exhibits a first-order phase transition at about 155 K that is accompanied by striking changes in its electrical and optical properties, and this phase transition was observed through in-situ TEM cooling studies of cross-sectional samples.},
doi = {10.2172/102253},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Apr 01 00:00:00 EST 1995},
month = {Sat Apr 01 00:00:00 EST 1995}
}

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