Excited states and valley effects in a negatively charged impurity in a silicon FinFET.
Conference
·
OSTI ID:1022171
- University of Melbourne, Australia
- Purdue University, West Lafayette, IN
- Delft University of Technology Delft, The Netherlands
The observation and characterization of a single atom system in silicon is a significant landmark in half a century of device miniaturization, and presents an important new laboratory for fundamental quantum and atomic physics. We compare with multi-million atom tight binding (TB) calculations the measurements of the spectrum of a single two-electron (2e) atom system in silicon - a negatively charged (D-) gated Arsenic donor in a FinFET. The TB method captures accurate single electron eigenstates of the device taking into account device geometry, donor potentials, applied fields, interfaces, and the full host bandstructure. In a previous work, the depths and fields of As donors in six device samples were established through excited state spectroscopy of the D0 electron and comparison with TB calculations. Using self-consistent field (SCF) TB, we computed the charging energies of the D- electron for the same six device samples, and found good agreement with the measurements. Although a bulk donor has only a bound singlet ground state and a charging energy of about 40 meV, calculations show that a gated donor near an interface can have a reduced charging energy and bound excited states in the D- spectrum. Measurements indeed reveal reduced charging energies and bound 2e excited states, at least one of which is a triplet. The calculations also show the influence of the host valley physics in the two-electron spectrum of the donor.
- Research Organization:
- Sandia National Laboratories
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000;
- OSTI ID:
- 1022171
- Report Number(s):
- SAND2010-5127C
- Conference Information:
- Proposed for presentation at the Fourth Annual Workshop on Silicon Science & Technology for Quantum Computing held August 23-24, 2010 in Albuquerque, NM.
- Country of Publication:
- United States
- Language:
- English
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