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Title: Materials Applications of Aberration-Corrected STEM

Abstract

The VG Microscopes 100 kV and 300 kV scanning transmission electron microscopes at Oak Ridge National Laboratory were equipped with Nion aberration correctors several years ago. This chapter reviews our experience with these correctors, specifically, the reduction in probe size by more than a factor of two and the associated benefits for materials research, which extend far beyond improved resolution. A smaller, brighter probe brings enhanced image contrast and signal to noise ratio, making it possible to image light atom columns in materials such as oxide perovskites. It vastly increases the sensitivity to single atoms, both for imaging and electron energy loss spectroscopy. In addition, aberration correction greatly improves the collection efficiency for bright field phase contrast imaging, allowing simultaneous, aberration-corrected, Zcontrast and phase contrast imaging. Finally, the larger probe-forming aperture gives a reduced depth of field, giving a depth resolution less than the thickness of a typical specimen. It becomes possible to focus directly on features at different depths in the specimen, and three-dimensional information can be extracted with single atom sensitivity. In conjunction with density functional and elasticity theory, these advances provide a new level of insight into the atomistic origins of materials properties. Several examples are discussedmore » that illustrate the potential for applications including the detection of orbital occupation stripes and interface stacking in complex oxides, the mechanism for improved critical currents in Ca-doped grain boundaries in high-Tc superconductors, the segregation of rare earth dopants in Si3N4 grain boundaries, the quantitative analysis of strain-induced growth phenomena in semiconductor quantum wells, the determination of the three-dimensional distribution of stray Hf atoms in a high dielectric constant device structure, and the origin of the remarkable catalytic activity of Au nanoparticles« less

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [2]
  1. ORNL
  2. Vanderbilt University
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1021943
DOE Contract Number:  
DE-AC05-00OR22725
Resource Type:
Book
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; APERTURES; ATOMS; CORRECTIONS; CRITICAL CURRENT; DENSITY FUNCTIONAL METHOD; DEPTH; EFFICIENCY; ELASTICITY; ELECTRON MICROSCOPES; ELECTRONS; ENERGY-LOSS SPECTROSCOPY; GRAIN BOUNDARIES; GROWTH; HIGH-TC SUPERCONDUCTORS; HYPERFINE STRUCTURE; IMAGES; INTERFACES; LEVELS; MATERIALS; MICROSCOPES; ORNL; OXIDES; PERMITTIVITY; PEROVSKITES; PROBES; QUANTUM WELLS; RARE EARTHS; REDUCTION; RESOLUTION; SCANNING ELECTRON MICROSCOPY; SEGREGATION; SENSITIVITY; SIGNAL-TO-NOISE RATIO; SIZE; THICKNESS; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Pennycook, Stephen J, Chisholm, Matthew F, Lupini, Andrew R, Varela del Arco, Maria, van Benthem, Klaus, Borisevich, Albina Y, Oxley, Mark P, Luo, Weidong, and Pantelides, Sokrates T. Materials Applications of Aberration-Corrected STEM. United States: N. p., 2008. Web.
Pennycook, Stephen J, Chisholm, Matthew F, Lupini, Andrew R, Varela del Arco, Maria, van Benthem, Klaus, Borisevich, Albina Y, Oxley, Mark P, Luo, Weidong, & Pantelides, Sokrates T. Materials Applications of Aberration-Corrected STEM. United States.
Pennycook, Stephen J, Chisholm, Matthew F, Lupini, Andrew R, Varela del Arco, Maria, van Benthem, Klaus, Borisevich, Albina Y, Oxley, Mark P, Luo, Weidong, and Pantelides, Sokrates T. Tue . "Materials Applications of Aberration-Corrected STEM". United States.
@article{osti_1021943,
title = {Materials Applications of Aberration-Corrected STEM},
author = {Pennycook, Stephen J and Chisholm, Matthew F and Lupini, Andrew R and Varela del Arco, Maria and van Benthem, Klaus and Borisevich, Albina Y and Oxley, Mark P and Luo, Weidong and Pantelides, Sokrates T.},
abstractNote = {The VG Microscopes 100 kV and 300 kV scanning transmission electron microscopes at Oak Ridge National Laboratory were equipped with Nion aberration correctors several years ago. This chapter reviews our experience with these correctors, specifically, the reduction in probe size by more than a factor of two and the associated benefits for materials research, which extend far beyond improved resolution. A smaller, brighter probe brings enhanced image contrast and signal to noise ratio, making it possible to image light atom columns in materials such as oxide perovskites. It vastly increases the sensitivity to single atoms, both for imaging and electron energy loss spectroscopy. In addition, aberration correction greatly improves the collection efficiency for bright field phase contrast imaging, allowing simultaneous, aberration-corrected, Zcontrast and phase contrast imaging. Finally, the larger probe-forming aperture gives a reduced depth of field, giving a depth resolution less than the thickness of a typical specimen. It becomes possible to focus directly on features at different depths in the specimen, and three-dimensional information can be extracted with single atom sensitivity. In conjunction with density functional and elasticity theory, these advances provide a new level of insight into the atomistic origins of materials properties. Several examples are discussed that illustrate the potential for applications including the detection of orbital occupation stripes and interface stacking in complex oxides, the mechanism for improved critical currents in Ca-doped grain boundaries in high-Tc superconductors, the segregation of rare earth dopants in Si3N4 grain boundaries, the quantitative analysis of strain-induced growth phenomena in semiconductor quantum wells, the determination of the three-dimensional distribution of stray Hf atoms in a high dielectric constant device structure, and the origin of the remarkable catalytic activity of Au nanoparticles},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2008},
month = {1}
}

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