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Title: Magnetism of Semiconductor-Based Magnetic Tunnel Junctions under Electric Field from First Principles

Abstract

Semiconductor magnetic tunnel junctions (MTJs), composed of diluted magnetic semiconductors (DMSs) sandwiching a semiconductor barrier, have potential applications in spintronics but their development has been slow due to the difficulty of controlling the magnetism of DMSs. In terms of density functional calculations for model semiconductor MTJs, (Zn,Co)O/ZnO/(Zn,Co)O and (Ga,Mn)N/GaN/(Ga,Mn)N, we show that the magnetic coupling between the transition metal ions in each DMS electrode of such semiconductor MTJs can be switched from ferromagnetic to antiferromagnetic, or vice versa, under the application of external electric field across the junctions. Our results suggest a possible avenue for the application of semiconductor MTJs.

Authors:
; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1021218
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 94; Journal Issue: 25, June 2009; Related Information: Article No. 252102; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRIC FIELDS; ELECTRODES; FUNCTIONALS; MAGNETIC SEMICONDUCTORS; MAGNETISM; TRANSITION ELEMENTS; Materials Science and Semiconductors

Citation Formats

Kan, E, Xiang, H, Yang, J, and Whangbo, M H. Magnetism of Semiconductor-Based Magnetic Tunnel Junctions under Electric Field from First Principles. United States: N. p., 2009. Web. doi:10.1063/1.3157273.
Kan, E, Xiang, H, Yang, J, & Whangbo, M H. Magnetism of Semiconductor-Based Magnetic Tunnel Junctions under Electric Field from First Principles. United States. https://doi.org/10.1063/1.3157273
Kan, E, Xiang, H, Yang, J, and Whangbo, M H. 2009. "Magnetism of Semiconductor-Based Magnetic Tunnel Junctions under Electric Field from First Principles". United States. https://doi.org/10.1063/1.3157273.
@article{osti_1021218,
title = {Magnetism of Semiconductor-Based Magnetic Tunnel Junctions under Electric Field from First Principles},
author = {Kan, E and Xiang, H and Yang, J and Whangbo, M H},
abstractNote = {Semiconductor magnetic tunnel junctions (MTJs), composed of diluted magnetic semiconductors (DMSs) sandwiching a semiconductor barrier, have potential applications in spintronics but their development has been slow due to the difficulty of controlling the magnetism of DMSs. In terms of density functional calculations for model semiconductor MTJs, (Zn,Co)O/ZnO/(Zn,Co)O and (Ga,Mn)N/GaN/(Ga,Mn)N, we show that the magnetic coupling between the transition metal ions in each DMS electrode of such semiconductor MTJs can be switched from ferromagnetic to antiferromagnetic, or vice versa, under the application of external electric field across the junctions. Our results suggest a possible avenue for the application of semiconductor MTJs.},
doi = {10.1063/1.3157273},
url = {https://www.osti.gov/biblio/1021218}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 25, June 2009,
volume = 94,
place = {United States},
year = {Mon Jun 01 00:00:00 EDT 2009},
month = {Mon Jun 01 00:00:00 EDT 2009}
}