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Title: Controlling the electronic structure of Co1-xFe2+xO4 thin films through iron doping

Journal Article · · Physical Review. B. Condensed Matter and Materials Physics

The electronic, magnetic and transport properties of iron-doped cobalt ferrite (Co{sub 1-x}Fe{sub 2+x}O{sub 4}) thin films grown epitaxially on MgO (001) substrates are investigated by soft x-ray absorption and photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, superconducting quantum interference device magnetometry, and resistivity measurements. The crystal structure for Co{sub 1-x}Fe{sub 2+x}O{sub 4} is determined to be nearly inverse spinel, with the degree of inversion increasing for increased doping until it becomes fully inverse spinel for Fe{sub 3}O{sub 4}. The doped iron cations have a valency of 2+ and reside solely on octahedral sites, which allows for conduction owing to hopping between Fe{sup 2+} and Fe{sup 3+} octahedral cations. The addition of Fe{sup 2+} cations increases the electron density of states near the Fermi energy, shifting the Fermi level from 0.75 to 0 eV with respect to the top of the valence band, as the doping increases from x = 0.01 to 1. This change in electronic structure results in a change in resistivity by over two orders of magnitude. In contrast, the magnetic properties of CoFe{sub 2}O{sub 4} thin films, characterized by a significantly reduced saturation magnetization compared to the bulk and large magnetic anisotropies, are affected less significantly by doping in the range from 0 to 0.63. These results show that Co{sub 1-x}Fe{sub 2+x}O{sub 4} has tunable electronic properties while maintaining magnetic properties similar to CoFe{sub 2}O{sub 4}.

Research Organization:
Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source
Sponsoring Organization:
DOE - OFFICE OF SCIENCE
DOE Contract Number:
DE-AC02-98CH10886
OSTI ID:
1020876
Report Number(s):
BNL-94713-2011-JA; R&D Project: LS001; KC0401030; TRN: US1103870
Journal Information:
Physical Review. B. Condensed Matter and Materials Physics, Vol. 83, Issue 3; ISSN 1098-0121
Country of Publication:
United States
Language:
English