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Title: Direct Determination of the Electronic Structure of the poly(3-hexylthiophene):phenyl-[6,6]-C61 butyric Acid Methyl Ester Blend

Abstract

This article focuses on the electronic structure of the poly(3-hexylthiophene):phenyl-[6,6]-C61 butyric acid methyl ester (P3HT:PCBM) blend, widely used in bulk heterojunction (BHJ) solar cells. Given the fact that the surface of the blend film is a nearly pure P3HT wetting layer, we use a lift-off method to access the originally buried surface, which is rich in both P3HT and PCBM and thus representative of the BHJ. The combination of direct and inverse photoemission spectroscopy on this surface leads to a determination of the energy gap between the lowest unoccupied molecular orbital (LUMO) of the acceptor and the highest occupied molecular orbital (HOMO) of the donor. The gap is {approx}1.4 eV, which implies a 0.5-0.6 eV interface dipole barrier between the two materials. The energy gap is found to be stable versus in situ annealing up to 100 C.

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL) National Synchrotron Light Source
Sponsoring Org.:
DOE - OFFICE OF SCIENCE
OSTI Identifier:
1020238
Report Number(s):
BNL-96088-2011-JA
Journal ID: ISSN 1566-1199; TRN: US201116%%218
DOE Contract Number:  
DE-AC02-98CH10886
Resource Type:
Journal Article
Journal Name:
Organic Electronics
Additional Journal Information:
Journal Volume: 11; Journal Issue: 11; Journal ID: ISSN 1566-1199
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; ANNEALING; BUTYRIC ACID; DIPOLES; ELECTRONIC STRUCTURE; ENERGY GAP; ESTERS; HETEROJUNCTIONS; PHOTOEMISSION; SOLAR CELLS; SPECTROSCOPY; national synchrotron light source

Citation Formats

Guan, C, Kim, J, Wang, H, Jaye, C, Fischer, D, Loo, Y, and Kahn, A. Direct Determination of the Electronic Structure of the poly(3-hexylthiophene):phenyl-[6,6]-C61 butyric Acid Methyl Ester Blend. United States: N. p., 2010. Web. doi:10.1016/j.orgel.2010.07.023.
Guan, C, Kim, J, Wang, H, Jaye, C, Fischer, D, Loo, Y, & Kahn, A. Direct Determination of the Electronic Structure of the poly(3-hexylthiophene):phenyl-[6,6]-C61 butyric Acid Methyl Ester Blend. United States. doi:10.1016/j.orgel.2010.07.023.
Guan, C, Kim, J, Wang, H, Jaye, C, Fischer, D, Loo, Y, and Kahn, A. Fri . "Direct Determination of the Electronic Structure of the poly(3-hexylthiophene):phenyl-[6,6]-C61 butyric Acid Methyl Ester Blend". United States. doi:10.1016/j.orgel.2010.07.023.
@article{osti_1020238,
title = {Direct Determination of the Electronic Structure of the poly(3-hexylthiophene):phenyl-[6,6]-C61 butyric Acid Methyl Ester Blend},
author = {Guan, C and Kim, J and Wang, H and Jaye, C and Fischer, D and Loo, Y and Kahn, A},
abstractNote = {This article focuses on the electronic structure of the poly(3-hexylthiophene):phenyl-[6,6]-C61 butyric acid methyl ester (P3HT:PCBM) blend, widely used in bulk heterojunction (BHJ) solar cells. Given the fact that the surface of the blend film is a nearly pure P3HT wetting layer, we use a lift-off method to access the originally buried surface, which is rich in both P3HT and PCBM and thus representative of the BHJ. The combination of direct and inverse photoemission spectroscopy on this surface leads to a determination of the energy gap between the lowest unoccupied molecular orbital (LUMO) of the acceptor and the highest occupied molecular orbital (HOMO) of the donor. The gap is {approx}1.4 eV, which implies a 0.5-0.6 eV interface dipole barrier between the two materials. The energy gap is found to be stable versus in situ annealing up to 100 C.},
doi = {10.1016/j.orgel.2010.07.023},
journal = {Organic Electronics},
issn = {1566-1199},
number = 11,
volume = 11,
place = {United States},
year = {2010},
month = {1}
}