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Title: Investigations of Cadmium Manganese Telluride Crystals for Room-temperature Radiation Detection

Abstract

Cadmium manganese telluride (CMT) has high potential as a material for room-temperature nuclear-radiation detectors. We investigated indium-doped CMT crystals taken from the stable growth region of the ingot and compared its characteristics with that from the last-to-freeze region. We employed different techniques, including synchrotron white-beam x-ray topography (SWBXT), current-voltage (I-V) measurement, and low-temperature photoluminescence spectra, and we also assessed their responses as detectors of radiation exposure. The crystal from the stable growth region proved to be superior to that from the last-to-freeze region; it is a single-grain crystal, free of twins, and displayed a resistivity higher by one order of magnitude. The segregation of indium dopant in the ingot might be responsible for its better resistivity. Furthermore, we recorded a good response in the detector fabricated from the crystal taken from the stable growth region; its ({mu}{tau})e value was 2.6 x 10{sup -3} cm{sup 2}/V, which is acceptable for thin detectors, including their application in medicine.

Authors:
; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL) National Synchrotron Light Source
Sponsoring Org.:
DOE - OFFICE OF SCIENCE
OSTI Identifier:
1020185
Report Number(s):
BNL-95918-2011-JA
Journal ID: ISSN 0361-5235; JECMA5; TRN: US201116%%165
DOE Contract Number:  
DE-AC02-98CH10886
Resource Type:
Journal Article
Journal Name:
Journal of Electronic Materials
Additional Journal Information:
Journal Volume: 39; Journal Issue: 7; Journal ID: ISSN 0361-5235
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CADMIUM; INDIUM; MANGANESE TELLURIDES; MEDICINE; PHOTOLUMINESCENCE; RADIATION DETECTION; RADIATIONS; SEGREGATION; SPECTRA; SYNCHROTRONS; TOPOGRAPHY; national synchrotron light source

Citation Formats

Yang, G, Bolotnikov, A, Li, L, Camarda, G, Cui, Y, Hossain, A, Kim, K, Carcelen, V, Gul, R, and James, R. Investigations of Cadmium Manganese Telluride Crystals for Room-temperature Radiation Detection. United States: N. p., 2010. Web. doi:10.1007/s11664-009-1050-6.
Yang, G, Bolotnikov, A, Li, L, Camarda, G, Cui, Y, Hossain, A, Kim, K, Carcelen, V, Gul, R, & James, R. Investigations of Cadmium Manganese Telluride Crystals for Room-temperature Radiation Detection. United States. doi:10.1007/s11664-009-1050-6.
Yang, G, Bolotnikov, A, Li, L, Camarda, G, Cui, Y, Hossain, A, Kim, K, Carcelen, V, Gul, R, and James, R. Fri . "Investigations of Cadmium Manganese Telluride Crystals for Room-temperature Radiation Detection". United States. doi:10.1007/s11664-009-1050-6.
@article{osti_1020185,
title = {Investigations of Cadmium Manganese Telluride Crystals for Room-temperature Radiation Detection},
author = {Yang, G and Bolotnikov, A and Li, L and Camarda, G and Cui, Y and Hossain, A and Kim, K and Carcelen, V and Gul, R and James, R},
abstractNote = {Cadmium manganese telluride (CMT) has high potential as a material for room-temperature nuclear-radiation detectors. We investigated indium-doped CMT crystals taken from the stable growth region of the ingot and compared its characteristics with that from the last-to-freeze region. We employed different techniques, including synchrotron white-beam x-ray topography (SWBXT), current-voltage (I-V) measurement, and low-temperature photoluminescence spectra, and we also assessed their responses as detectors of radiation exposure. The crystal from the stable growth region proved to be superior to that from the last-to-freeze region; it is a single-grain crystal, free of twins, and displayed a resistivity higher by one order of magnitude. The segregation of indium dopant in the ingot might be responsible for its better resistivity. Furthermore, we recorded a good response in the detector fabricated from the crystal taken from the stable growth region; its ({mu}{tau})e value was 2.6 x 10{sup -3} cm{sup 2}/V, which is acceptable for thin detectors, including their application in medicine.},
doi = {10.1007/s11664-009-1050-6},
journal = {Journal of Electronic Materials},
issn = {0361-5235},
number = 7,
volume = 39,
place = {United States},
year = {2010},
month = {1}
}