Influence of Sn Migration on Phase Transition in GeTe and Ge2Se3 Thin Films

Journal Article · Fri Jan 01 00:00:00 EST 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3385781· OSTI ID:1019713

Devasia, A; Kurinec, S; Campbell, K; Raoux, S

Phase transitions in GeTe/SnSe and Ge{sub 2}Se{sub 3}/SnTe are investigated using time resolved x-ray diffraction. GeTe exhibits a structural transition from rhombohedral to the cubic phase at 300 C, which is - 100 C lower than that of pure GeTe. This is facilitated by incorporation of Sn from SnSe. Sn migration is observed explicitly in Ge{sub 2}Se{sub 3}/SnTe by separation of SnSe phase. Amorphous Ge{sub 2}Se{sub 3} is also found to crystallize at a lower temperature of 300 C resulting in orthorhombic GeSe and monoclinic GeSe{sub 2}. Thus, inclusion of a Sn containing layer may offer a means to tailor phase transition in Ge-chalcogenide thin films for phase change memory applications.

• Research Organization: Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source
• Sponsoring Organization: DOE - OFFICE OF SCIENCE
• DOE Contract Number: DE-AC02-98CH10886
• OSTI ID: 1019713
• Report Number(s): BNL-95559-2011-JA; APPLAB; TRN: US201115%%353
• Journal Information: Applied Physics Letters, Vol. 96, Issue 14; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
THIN FILMS
X-RAY DIFFRACTION
TIN
national synchrotron light source