Phase Formation and Thermal Stability of Ultrathin Nickel-silicides on Si(100)
The solid-state reaction and agglomeration of thin nickel-silicide films was investigated from sputter deposited nickel films (1-10 nm) on silicon-on-insulator (100) substrates. For typical anneals at a ramp rate of 3 C/s, 5-10 nm Ni films react with silicon and form NiSi, which agglomerates at 550-650 C, whereas films with a thickness of 3.7 nm of less were found to form an epitaxylike nickel-silicide layer. The resulting films show an increased thermal stability with a low electrical resistivity up to 800 C.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source
- Sponsoring Organization:
- DOE - OFFICE OF SCIENCE
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 1019708
- Report Number(s):
- BNL-95554-2011-JA; APPLAB; TRN: US201115%%348
- Journal Information:
- Applied Physics Letters, Vol. 96, Issue 17; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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