Carbon doping of III-V compound semiconductors
- Univ. of California, Berkeley, CA (United States)
Focus of the study is C acceptor doping of GaAs, since C diffusion coefficient is at least one order of magnitude lower than that of other common p-type dopants in GaAs. C ion implantation results in a concentration of free holes in the valence band < 10% of that of the implanted C atoms for doses > 1014/cm2. Rutherford backscattering, electrical measurements, Raman spectroscopy, and Fourier transform infrared spectroscopy were amonth the techniques used. Ga co-implantation increased the C activation in two steps: first, the additional radiation damage creates vacant As sites that the implanted C can occupy, and second, it maintains the stoichiometry of the implanted layer, reducing the number of compensating native defects. In InP, the behavior of C was different from that in GaAs. C acts as n-type dopant in the In site; however, its incorporation by implantation was difficult to control; experiments using P co-implants were inconsistent. The lattice position of inactive C in GaAs in implanted and epitaxial layers is discussed; evidence for formation of C precipitates in GaAs and InP was found. Correlation of the results with literature on C doping in III-V semiconductors led to a phenomenological description of C in III-V compounds (particularly GaAs): The behavior of C is controlled by the chemical nature of C and the instrinsic Fermi level stabilization energy of the material.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 10196996
- Report Number(s):
- LBL-36256; ON: DE95003431
- Resource Relation:
- Other Information: TH: Thesis (Ph.D.); PBD: Sep 1994
- Country of Publication:
- United States
- Language:
- English
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