Experimental Study of Resistive Bistability in Metal Oxide Junctions
We have studied resistive bistability (memory) effects in junctions based on metal oxides, with a focus on sample-to-sample reproducibility, which is necessary for the use of such junctions as crosspoint devices of hybrid CMOS/nanoelectronic circuits. Few-nm-thick layers of NbO{sub x}, CuO{sub x} and TiO{sub x} have been formed by thermal and plasma oxidation, at various deposition and oxidation conditions, both with and without rapid thermal post-annealing. The resistive bistability effect has been observed for all these materials, with particularly high endurance (over 10{sup 3} switching cycles) obtained for single-layer TiO{sub 2} junctions, and the best reproducibility reached for multi-layer junctions of the same material. Fabrication optimization has allowed us to improve the OFF/ON resistance ratio to about 10{sup 3}, but the sample-to-sample reproducibility is so far lower than that required for large-scale integration.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
- Sponsoring Organization:
- DOE - OFFICE OF SCIENCE
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 1019514
- Report Number(s):
- BNL-95263-2011-JA; R&D Project: NC-001; TRN: US201115%%187
- Journal Information:
- Applied Physics A - Materials Science & Processing, Vol. 103, Issue 2
- Country of Publication:
- United States
- Language:
- English
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