Photoluminescence under pressure and annealing of nitrogen-doped ZnSe

Chen, A L; Walukiewicz, W; Haller, E E; Luo, H; Karczewski, G; Furdyna, J

Title: Photoluminescence under pressure and annealing of nitrogen-doped ZnSe

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Abstract

The authors report photoluminescence measurement of MBE-grown nitrogen-doped ZnSe under hydrostatic stress. They determined the pressure coefficients of two separate donor-acceptor pair transitions in these samples. The results indicate that the deeper transition is caused by a localized donor that moves further into the band gap with increasing pressure, confirming that it stems from a localized donor. They also show that annealing at temperatures above 325 C produces this donor and results in compensation of the acceptor.

Authors:

Chen, A L; Walukiewicz, W ^[1]; Haller, E E ^[1]; Luo, H; Karczewski, G; Furdyna, J ^[2]

Lawrence Berkeley Lab., CA (United States). Materials Sciences Div.
Univ. of Notre Dame, IN (United States). Dept. of Physics

Publication Date:: Fri Jul 01 00:00:00 EDT 1994

Research Org.:: Lawrence Berkeley Lab., CA (United States)

Sponsoring Org.:: USDOE, Washington, DC (United States)

OSTI Identifier:: 10192479

Report Number(s):: LBL-35358; CONF-9408155-9
ON: DE95002355; TRN: AHC29428%%91

DOE Contract Number:: AC03-76SF00098

Resource Type:: Technical Report

Resource Relation:: Conference: 22. international conference on physics of semiconductors,Vancouver (Canada),15-19 Aug 1994; Other Information: PBD: Jul 1994

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; ZINC SELENIDES; PHOTOLUMINESCENCE; MOLECULAR BEAM EPITAXY; DOPED MATERIALS; ENERGY GAP; USES; PRESSURE DEPENDENCE; EXPERIMENTAL DATA; 360606; PHYSICAL PROPERTIES

Citation Formats


                    Chen, A L, Walukiewicz, W, Haller, E E, Univ. of California, Berkeley, CA, Luo, H, Karczewski, G, and Furdyna, J. Photoluminescence under pressure and annealing of nitrogen-doped ZnSe.  United States: N. p., 1994. 
        Web.

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                    Chen, A L, Walukiewicz, W, Haller, E E, Univ. of California, Berkeley, CA, Luo, H, Karczewski, G, & Furdyna, J. Photoluminescence under pressure and annealing of nitrogen-doped ZnSe.  United States.

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                    Chen, A L, Walukiewicz, W, Haller, E E, Univ. of California, Berkeley, CA, Luo, H, Karczewski, G, and Furdyna, J. 1994.  
        "Photoluminescence under pressure and annealing of nitrogen-doped ZnSe".  United States.

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@article{osti_10192479,

  title        = {Photoluminescence under pressure and annealing of nitrogen-doped ZnSe},

  author       = {Chen, A L and Walukiewicz, W and Haller, E E and Univ. of California, Berkeley, CA and Luo, H and Karczewski, G and Furdyna, J},

  abstractNote = {The authors report photoluminescence measurement of MBE-grown nitrogen-doped ZnSe under hydrostatic stress. They determined the pressure coefficients of two separate donor-acceptor pair transitions in these samples. The results indicate that the deeper transition is caused by a localized donor that moves further into the band gap with increasing pressure, confirming that it stems from a localized donor. They also show that annealing at temperatures above 325 C produces this donor and results in compensation of the acceptor.},

  doi          = {},

  url          = {https://www.osti.gov/biblio/10192479},
  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Fri Jul 01 00:00:00 EDT 1994},

  month        = {Fri Jul 01 00:00:00 EDT 1994}

}

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