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Title: Magnetron sputtered boron films and Ti/B multilayer structures

Abstract

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor 5 deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity 10 from grazing to normal incidence.

Inventors:
;
Publication Date:
Research Org.:
Lawrence Livermore National Lab., CA (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
10190078
Patent Number(s):
PATENTS-US-A7666971
Application Number:
ON: DE93002022
Assignee:
Dept. of Energy
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent Application
Resource Relation:
Other Information: PBD: 11 Mar 1991
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BORON; DEPOSITION; TITANIUM; THIN FILMS; AMORPHOUS STATE; SPUTTERING; ELECTRIC FILTERS; MIRRORS; MAGNETRONS; 360101; PREPARATION AND FABRICATION

Citation Formats

Makowiecki, D M, and Jankowski, A F. Magnetron sputtered boron films and Ti/B multilayer structures. United States: N. p., 1991. Web.
Makowiecki, D M, & Jankowski, A F. Magnetron sputtered boron films and Ti/B multilayer structures. United States.
Makowiecki, D M, and Jankowski, A F. 1991. "Magnetron sputtered boron films and Ti/B multilayer structures". United States. https://www.osti.gov/servlets/purl/10190078.
@article{osti_10190078,
title = {Magnetron sputtered boron films and Ti/B multilayer structures},
author = {Makowiecki, D M and Jankowski, A F},
abstractNote = {A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor 5 deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity 10 from grazing to normal incidence.},
doi = {},
url = {https://www.osti.gov/biblio/10190078}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1991},
month = {3}
}