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Title: Amorphous silicon/polycrystalline thin film solar cells

Abstract

An improved photovoltaic solar cell is described including a p-type amorphous silicon layer, intrinsic amorphous silicon, and an n-type polycrystalline semiconductor such as cadmium sulfide, cadmium zinc sulfide, zinc selenide, gallium phosphide, and gallium nitride. The polycrystalline semiconductor has an energy bandgap greater than that of the amorphous silicon. The solar cell can be provided as a single-junction device or a multijunction device.

Inventors:
Publication Date:
Research Org.:
Solar Energy Research Inst., Golden, CO (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
10189752
Patent Number(s):
PATENTS-US-A7668849
Application Number:
ON: DE93002027
Assignee:
Dept. of Energy NREL; SCA: 140501; PA: NTS-93:006642; EDB-93:001102; ERA-18:002924; SN: 92000863091
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent Application
Resource Relation:
Other Information: PBD: 13 Mar 1991
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; SILICON SOLAR CELLS; SILICON; AMORPHOUS STATE; P-TYPE CONDUCTORS; N-TYPE CONDUCTORS; SEMICONDUCTOR MATERIALS; POLYCRYSTALS; ENERGY GAP; 140501; PHOTOVOLTAIC CONVERSION

Citation Formats

Ullal, H.S. Amorphous silicon/polycrystalline thin film solar cells. United States: N. p., 1991. Web.
Ullal, H.S. Amorphous silicon/polycrystalline thin film solar cells. United States.
Ullal, H.S. Wed . "Amorphous silicon/polycrystalline thin film solar cells". United States. https://www.osti.gov/servlets/purl/10189752.
@article{osti_10189752,
title = {Amorphous silicon/polycrystalline thin film solar cells},
author = {Ullal, H.S.},
abstractNote = {An improved photovoltaic solar cell is described including a p-type amorphous silicon layer, intrinsic amorphous silicon, and an n-type polycrystalline semiconductor such as cadmium sulfide, cadmium zinc sulfide, zinc selenide, gallium phosphide, and gallium nitride. The polycrystalline semiconductor has an energy bandgap greater than that of the amorphous silicon. The solar cell can be provided as a single-junction device or a multijunction device.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Mar 13 00:00:00 EST 1991},
month = {Wed Mar 13 00:00:00 EST 1991}
}

Patent Application:

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