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Title: Carrier Density and Compensation in Semiconductors with Multi Dopants and Multi Transition Energy Levels: The Case of Cu Impurity in CdTe: Preprint

Abstract

Doping is one of the most important issues in semiconductor physics. The charge carrier generated by doping can profoundly change the properties of semiconductors and their performance in optoelectronic device applications, such as solar cells. Using detailed balance theory and first-principles calculated defect formation energies and transition energy levels, we derive general formulae tocalculate carrier density for semiconductors with multi dopants and multi transition energy levels. As an example, we studied CdTe doped with Cu, in which VCd, CuCd, and Cui are the dominant defects/impurities. We show that in this system, when Cu concentration increases, the doping properties of the system can change from a poor p-type, to a poorer p-type, to a better p-type, and then to a poorp-type again, in good agreement with experimental observation of CdTe-based solar cells.

Authors:
; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1018863
Report Number(s):
NREL/CP-5200-50683
TRN: US201114%%374
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Conference
Resource Relation:
Conference: Presented at the 37th IEEE Photovoltaic Specialists Conference (PVSC 37), 19-24 June 2011, Seattle, Washington
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIER DENSITY; CHARGE CARRIERS; DEFECTS; ENERGY LEVELS; PERFORMANCE; PHYSICS; SOLAR CELLS; CdTe; solar cells; doping; carrier density; Cu impurity

Citation Formats

Wei, S H, Ma, J, Gessert, T A, and Chin, K K. Carrier Density and Compensation in Semiconductors with Multi Dopants and Multi Transition Energy Levels: The Case of Cu Impurity in CdTe: Preprint. United States: N. p., 2011. Web. doi:10.1109/PVSC.2011.6186535.
Wei, S H, Ma, J, Gessert, T A, & Chin, K K. Carrier Density and Compensation in Semiconductors with Multi Dopants and Multi Transition Energy Levels: The Case of Cu Impurity in CdTe: Preprint. United States. https://doi.org/10.1109/PVSC.2011.6186535
Wei, S H, Ma, J, Gessert, T A, and Chin, K K. Fri . "Carrier Density and Compensation in Semiconductors with Multi Dopants and Multi Transition Energy Levels: The Case of Cu Impurity in CdTe: Preprint". United States. https://doi.org/10.1109/PVSC.2011.6186535. https://www.osti.gov/servlets/purl/1018863.
@article{osti_1018863,
title = {Carrier Density and Compensation in Semiconductors with Multi Dopants and Multi Transition Energy Levels: The Case of Cu Impurity in CdTe: Preprint},
author = {Wei, S H and Ma, J and Gessert, T A and Chin, K K},
abstractNote = {Doping is one of the most important issues in semiconductor physics. The charge carrier generated by doping can profoundly change the properties of semiconductors and their performance in optoelectronic device applications, such as solar cells. Using detailed balance theory and first-principles calculated defect formation energies and transition energy levels, we derive general formulae tocalculate carrier density for semiconductors with multi dopants and multi transition energy levels. As an example, we studied CdTe doped with Cu, in which VCd, CuCd, and Cui are the dominant defects/impurities. We show that in this system, when Cu concentration increases, the doping properties of the system can change from a poor p-type, to a poorer p-type, to a better p-type, and then to a poorp-type again, in good agreement with experimental observation of CdTe-based solar cells.},
doi = {10.1109/PVSC.2011.6186535},
url = {https://www.osti.gov/biblio/1018863}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2011},
month = {7}
}

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