Nanophase evolution at semiconductor/electrolyte interface in situ probed by time-resolved high-energy synchrotron x-ray diffraction.
- Advanced Photon Source
Real-time evolution of nanoparticles grown at the semiconductor/electrolyte interface formed between a single crystalline n-type GaAs wafer and an aqueous solution of AgNO{sub 3} has been studied by using high-energy synchrotron X-ray diffraction. The results reveal the distinct nucleation and growth steps involved in the growth of anisotropic Ag nanoplates on the surface of the GaAs wafer. For the first time, a quick transit stage is observed to be responsible for the structural transformation of the nuclei to form structurally stable seeds that are critical for guiding their anisotropic growth into nanoplates. Reaction between a GaAs wafer and AgNO{sub 3} solution at room temperature primarily produces Ag nanoplates on the surface of the GaAs wafer in the dark and at room temperature. In contrast, X-ray irradiation can induce charge separation in the GaAs wafer to drive the growth of nanoparticles made of silver oxy salt (Ag{sub 7}NO{sub 11}) and silver arsenate (Ag{sub 3}AsO{sub 4}) at the semiconductor/electrolyte interface if the GaAs wafer is illuminated by the X-ray and reaction time is long enough.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC02-06CH11357
- OSTI ID:
- 1018497
- Report Number(s):
- ANL/CNM/JA-67527; TRN: US201114%%28
- Journal Information:
- Nano Lett., Vol. 10, Issue 9 ; Sep. 2010
- Country of Publication:
- United States
- Language:
- ENGLISH
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