Sputtering of tin and gallium-tin clusters
Abstract
Tin and gallium-tin clusters have been produced by 4 keV Ar{sup +} ion bombardment of polycrystalline tin and the gallium-tin eutectic alloy and analyzed by time-of-flight mass spectrometry. The sputtered neutral species were photoionized with 193 nm (6.4 eV) excimer laser light. Neutral tin clusters containing up to 10 atoms and mixed gallium-tin clusters Ga{sub (n-m)}Sn{sub m} with n {<=} 4 for the neutrals and N {<=} 3 for the sputtered ionic species have been detected. Laser power density dependent intensity measurements, relative yields, and kinetic energy distributions have been measured. The abundance distributions of the mixed clusters have been found to be nonstatistical due to significant differences in the ionization efficiencies for clusters with equal nuclearity but different number of tin atoms. The results indicate that Ga{sub 2}Sn and Ga{sub 3}Sn like the all-gallium clusters have ionization potentials below 6.4 eV. In the case of Sn{sub 5}, Sn{sub 6}, GaSn and Ga{sub (n-m)}Sn{sub m} clusters with n=2 to 4 and m>1, the authors detect species that have sufficient internal energy to be one photon ionized despite ionization potentials that are higher 6.4 eV. The tin atom signal that is detected can be attributed to photofragmentation of dimers for bothmore »
- Authors:
- Publication Date:
- Research Org.:
- Argonne National Lab., IL (United States). Chemical Technology Div.
- Sponsoring Org.:
- USDOE, Washington, DC (United States)
- OSTI Identifier:
- 10180069
- Report Number(s):
- ANL/CHM/CP-83910; CONF-9408150-1
ON: DE94018389; TRN: 94:018905
- DOE Contract Number:
- W-31109-ENG-38
- Resource Type:
- Technical Report
- Resource Relation:
- Conference: 10. international workshop of inelastic ion-surface collisions,Grand Targhee Resort, WY (United States),8-12 Aug 1994; Other Information: PBD: 1 Aug 1994
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; TIN; SPUTTERING; GALLIUM ALLOYS; TIN ALLOYS; ARGON IONS; COLLISIONS; SOLID CLUSTERS; EXPERIMENTAL DATA; MASS SPECTRA; TIME-OF-FLIGHT SPECTROMETERS; IONIZATION POTENTIAL; 665300; INTERACTIONS BETWEEN BEAMS AND CONDENSED MATTER
Citation Formats
Lill, T., Calaway, W.F., Ma, Z., and Pellin, M.J.. Sputtering of tin and gallium-tin clusters. United States: N. p., 1994.
Web. doi:10.2172/10180069.
Lill, T., Calaway, W.F., Ma, Z., & Pellin, M.J.. Sputtering of tin and gallium-tin clusters. United States. doi:10.2172/10180069.
Lill, T., Calaway, W.F., Ma, Z., and Pellin, M.J.. Mon .
"Sputtering of tin and gallium-tin clusters". United States.
doi:10.2172/10180069. https://www.osti.gov/servlets/purl/10180069.
@article{osti_10180069,
title = {Sputtering of tin and gallium-tin clusters},
author = {Lill, T. and Calaway, W.F. and Ma, Z. and Pellin, M.J.},
abstractNote = {Tin and gallium-tin clusters have been produced by 4 keV Ar{sup +} ion bombardment of polycrystalline tin and the gallium-tin eutectic alloy and analyzed by time-of-flight mass spectrometry. The sputtered neutral species were photoionized with 193 nm (6.4 eV) excimer laser light. Neutral tin clusters containing up to 10 atoms and mixed gallium-tin clusters Ga{sub (n-m)}Sn{sub m} with n {<=} 4 for the neutrals and N {<=} 3 for the sputtered ionic species have been detected. Laser power density dependent intensity measurements, relative yields, and kinetic energy distributions have been measured. The abundance distributions of the mixed clusters have been found to be nonstatistical due to significant differences in the ionization efficiencies for clusters with equal nuclearity but different number of tin atoms. The results indicate that Ga{sub 2}Sn and Ga{sub 3}Sn like the all-gallium clusters have ionization potentials below 6.4 eV. In the case of Sn{sub 5}, Sn{sub 6}, GaSn and Ga{sub (n-m)}Sn{sub m} clusters with n=2 to 4 and m>1, the authors detect species that have sufficient internal energy to be one photon ionized despite ionization potentials that are higher 6.4 eV. The tin atom signal that is detected can be attributed to photofragmentation of dimers for both sputtering from polycrystalline tin and from the gallium-tin eutectic alloy.},
doi = {10.2172/10180069},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Aug 01 00:00:00 EDT 1994},
month = {Mon Aug 01 00:00:00 EDT 1994}
}
-
Depleted uranium that included carbide inclusions was sputtered with 30-keV gallium ions or 16-kev cesium ions to depths much greater than the ions’ range, i.e. using steady-state sputtering. The recession of both the uranium’s and uranium carbide’s surfaces and the ion corresponding fluences were used to determine the steady-state target sputtering yields of both uranium and uranium carbide, i.e. 6.3 atoms of uranium and 2.4 units of uranium carbide eroded per gallium ion, and 9.9 uranium atoms and 3.65 units of uranium carbide eroded by cesium ions. The steady state surface composition resulting from the simultaneous gallium or cesium implantationmore »
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Alloy sputtering at high fluence: Preferential sputtering and competing effects
This work addresses composition profiles and partial sputter yields of an alloy under ion bombardment. Effects of preferential sputtering, mixing, and gibbsian segregation are modelled. Theoretical basis is an integro-differential equation into which a feasible expression for a segregation current has been included. Dependence on composition of pertinent input parameters like relocation cross sections and atomic volumes is allowed for but not explored explicitly. In the high fluence limit, a stationary state may be reached with a composition profile that shows pronounced deviations from bulk stoichiqmetry. Two methods are designed for direct determination of such stationary solutions. An iterative schememore »