In-Situ Characterization of Growth and Interfaces in a-Si:H Devices: Final Subcontract Report, 1 May 1991 - 31 May 1994
This report describes work to identify materials parameters that can quantitatively describe the solar cell performance correctly in the initial and stabilized states and are consistent with a microscopic model of the metastable defect site. The objective is to be accomplished by applying results of in-situ analyses of a-Si:H surfaces and the transparent conducting oxide (TCO)/p/i interfaces to complement the present understanding of the electronic properties of materials and devices. A second objective of the program is to demonstrate, characterize, and understand improved doped and undoped ``wide-gap`` materials for use in achieving 15% stabilized photovoltaic modules (``wide-gap`` materials are defined as those materials with a band gap of at least 1.9 eV).
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 10170471
- Report Number(s):
- NREL/TP-451-7045; ON: DE94011847; BR: WM1020000
- Resource Relation:
- Other Information: PBD: Jul 1994
- Country of Publication:
- United States
- Language:
- English
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In-situ characterization of growth and interfaces in a-Si:H devices. Annual subcontract report, 1 May 1991--30 April 1992
In-Situ Characterization of Growth and Interfaces in a-Si:H Devices, Annual Subcontract Report, 1 May 1991 - 30 April 1992