Dual chamber system providing simultaneous etch and deposition on opposing substrate sides for growing low defect density epitaxial layers

Patent · Tue Mar 08 00:00:00 EST 2011

OSTI ID:1016541

Kulkarni, Nagraj S.; Kasica, Richard J.

A dual-chamber reactor can include a housing enclosing a volume having a divider therein, where the divider defines a first chamber and a second chamber. The divider can include a substrate holder that supports at least one substrate and exposes a first side of the substrate to the first chamber and a second side of the substrate to the second chamber. The first chamber can include an inlet for delivering at least one reagent to the first chamber for forming a film on the first side of the substrate, and the second chamber can include a removal device for removing material from the second side of the substrate.

• Research Organization: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-00OR22725
• Assignee: The United States of America as represented by the United States Department of Energy (Washington, DC)
• Patent Number(s): 7,902,047
• Application Number: 12/180,280
• OSTI ID: 1016541
• Resource Relation: Patent File Date: 2008 Jul 25
• Country of Publication: United States
• Language: English

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