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Title: Dual chamber system providing simultaneous etch and deposition on opposing substrate sides for growing low defect density epitaxial layers

Abstract

A dual-chamber reactor can include a housing enclosing a volume having a divider therein, where the divider defines a first chamber and a second chamber. The divider can include a substrate holder that supports at least one substrate and exposes a first side of the substrate to the first chamber and a second side of the substrate to the second chamber. The first chamber can include an inlet for delivering at least one reagent to the first chamber for forming a film on the first side of the substrate, and the second chamber can include a removal device for removing material from the second side of the substrate.

Inventors:
 [1]
  1. Knoxville, TN
Publication Date:
Research Org.:
The United States of America as represented by the United States Department of Energy (Washington, DC) N/A (
Sponsoring Org.:
USDOE
OSTI Identifier:
1016541
Patent Number(s):
7,902,047
Application Number:
US Patent Application 12/180,280
Assignee:
The United States of America as represented by the United States Department of Energy (Washington, DC) N/A (
DOE Contract Number:  
AC05-00OR22725
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Kulkarni, Nagraj S, and Kasica, Richard J. Dual chamber system providing simultaneous etch and deposition on opposing substrate sides for growing low defect density epitaxial layers. United States: N. p., 2011. Web.
Kulkarni, Nagraj S, & Kasica, Richard J. Dual chamber system providing simultaneous etch and deposition on opposing substrate sides for growing low defect density epitaxial layers. United States.
Kulkarni, Nagraj S, and Kasica, Richard J. Tue . "Dual chamber system providing simultaneous etch and deposition on opposing substrate sides for growing low defect density epitaxial layers". United States. https://www.osti.gov/servlets/purl/1016541.
@article{osti_1016541,
title = {Dual chamber system providing simultaneous etch and deposition on opposing substrate sides for growing low defect density epitaxial layers},
author = {Kulkarni, Nagraj S and Kasica, Richard J.},
abstractNote = {A dual-chamber reactor can include a housing enclosing a volume having a divider therein, where the divider defines a first chamber and a second chamber. The divider can include a substrate holder that supports at least one substrate and exposes a first side of the substrate to the first chamber and a second side of the substrate to the second chamber. The first chamber can include an inlet for delivering at least one reagent to the first chamber for forming a film on the first side of the substrate, and the second chamber can include a removal device for removing material from the second side of the substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2011},
month = {3}
}

Patent:

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