A simple single-photomask process for fabrication of high-efficiency multicrystalline silicon solar cells
We have developed a simplified process sequence for fabrication of high-efficiency multicrystalline silicon (mc-Si) solar cells. Photolithography is required only to define the evaporated metal gridlines. We use this fast turn-around, high-yield baseline process to evaluate different mc-Si materials and new processing procedures. The process uses a one-step emitter diffusion/drive-in and an aluminum-alloyed back surface field to provide a well-passivated cell with excellent blue and red response. Laser-scribed cell-isolation grooves are used to define both moderate-area (4 cm{sup 2}) and large-area (42 cm{sup 2}) cells. We have been able to achieve minority-carrier diffusion lengths well over 300 {mu}m in 2-{Omega}cm mc-Si material and have achieved efficiencies of 16.2% in 4-cm{sup 2} cells. This was accomplished without hydrogenation to passivate bulk defects or texturing to reduce reflectance. By using the same fabrication process for both small-area and large-area cells, we intend to determine and minimize the effect of areal inhomogeneities on large-area mc-Si cell performance.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 10161888
- Report Number(s):
- SAND-94-1574C; CONF-941203-3; ON: DE94014251; BR: GB0103012
- Resource Relation:
- Conference: 1. world conference on photovoltaic energy conversion,Waikoloa, HI (United States),5-9 Dec 1994; Other Information: PBD: [1994]
- Country of Publication:
- United States
- Language:
- English
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