Front and backside processed thin film electronic devices

Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A; Evans, Paul G; Lagally, Max G; Ma, Zhenqiang

Title: Front and backside processed thin film electronic devices

Patent · Tue Oct 12 00:00:00 EDT 2010

OSTI ID:1016132

Yuan, Hao-Chih ^[1]; Wang, Guogong ^[1]; Eriksson, Mark A ^[1]; Evans, Paul G ^[1]; Lagally, Max G ^[1]; Ma, Zhenqiang ^[2]

Madison, WI
Middleton, WI

This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

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Research Organization:: Wisconsin Alumni Research Foundation (Madison, WI)

Sponsoring Organization:: USDOE

DOE Contract Number:: FG02-03ER46028

Assignee:: Wisconsin Alumni Research Foundation (Madison, WI)

Patent Number(s):: 7,812,353

Application Number:: 12/042,066

OSTI ID:: 1016132

Country of Publication:: United States

Language:: English

References (10)

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Three-Dimensional Nanofabrication with Rubber Stamps and Conformable Photomasks Jeon, S.; Menard, E.; Park, J.-U. Advanced Materials, Vol. 16, Issue 15, p. 1369-1373 https://doi.org/10.1002/adma.200400593	journal	August 2004
Bendable single crystal silicon thin film transistors formed by printing on plastic substrates Menard, E.; Nuzzo, R. G.; Rogers, J. A. Applied Physics Letters, Vol. 86, Issue 9, Article No. 093507 https://doi.org/10.1063/1.1866637	journal	February 2005
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