skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Wafer characteristics via reflectometry

Abstract

Various exemplary methods (800, 900, 1000, 1100) are directed to determining wafer thickness and/or wafer surface characteristics. An exemplary method (900) includes measuring reflectance of a wafer and comparing the measured reflectance to a calculated reflectance or a reflectance stored in a database. Another exemplary method (800) includes positioning a wafer on a reflecting support to extend a reflectance range. An exemplary device (200) has an input (210), analysis modules (222-228) and optionally a database (230). Various exemplary reflectometer chambers (1300, 1400) include radiation sources positioned at a first altitudinal angle (1308, 1408) and at a second altitudinal angle (1312, 1412). An exemplary method includes selecting radiation sources positioned at various altitudinal angles. An exemplary element (1650, 1850) includes a first aperture (1654, 1854) and a second aperture (1658, 1858) that can transmit reflected radiation to a fiber and an imager, respectfully.

Inventors:
 [1]
  1. Denver, CO
Publication Date:
Research Org.:
Alliance for Sustainable Energy, LLC (Golden, CO)
Sponsoring Org.:
USDOE
OSTI Identifier:
1016130
Patent Number(s):
7,815,862
Application Number:
10/535,291
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Sopori, Bhushan L. Wafer characteristics via reflectometry. United States: N. p., 2010. Web.
Sopori, Bhushan L. Wafer characteristics via reflectometry. United States.
Sopori, Bhushan L. Tue . "Wafer characteristics via reflectometry". United States. https://www.osti.gov/servlets/purl/1016130.
@article{osti_1016130,
title = {Wafer characteristics via reflectometry},
author = {Sopori, Bhushan L},
abstractNote = {Various exemplary methods (800, 900, 1000, 1100) are directed to determining wafer thickness and/or wafer surface characteristics. An exemplary method (900) includes measuring reflectance of a wafer and comparing the measured reflectance to a calculated reflectance or a reflectance stored in a database. Another exemplary method (800) includes positioning a wafer on a reflecting support to extend a reflectance range. An exemplary device (200) has an input (210), analysis modules (222-228) and optionally a database (230). Various exemplary reflectometer chambers (1300, 1400) include radiation sources positioned at a first altitudinal angle (1308, 1408) and at a second altitudinal angle (1312, 1412). An exemplary method includes selecting radiation sources positioned at various altitudinal angles. An exemplary element (1650, 1850) includes a first aperture (1654, 1854) and a second aperture (1658, 1858) that can transmit reflected radiation to a fiber and an imager, respectfully.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2010},
month = {10}
}

Patent:

Save / Share: